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参数资料
| 型号： | UPA2791GR-E2-AT |
| 厂商： | NEC Corp. |
| 英文描述： | MOS FIELD EFFECT TRANSISTOR SWITCHING N- AND P-CHANNEL POWER MOS FET |
| 中文描述： | MOS场效应晶体管的开关N沟道和P沟道功率场效应晶体管 |
| 文件页数： | 3/12页 |
| 文件大小： | 245K |
| 代理商： | UPA2791GR-E2-AT |
Data Sheet G18207EJ2V0DS
3
μ
PA2791GR
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C. All terminals are connected.)
N-channel
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
10
μ
A
Gate Leakage Current
I
GSS
V
GS
=
±
16 V, V
DS
= 0 V
±
10
μ
A
Gate to Source Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
1.0
2.5
V
Forward Transfer Admittance
Note
| y
fs
|
V
DS
= 10 V, I
D
= 3 A
2.0
S
Drain to Source On-state Resistance
Note
R
DS(on)1
V
GS
= 10 V, I
D
= 3.0 A
28.5
36.0
m
Ω
R
DS(on)2
V
GS
= 4.5 V, I
D
= 3.0 A
36.0
50.0
m
Ω
Input Capacitance
C
iss
V
DS
= 10 V,
400
pF
Output Capacitance
C
oss
V
GS
= 0 V,
80
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
50
pF
Turn-on Delay Time
t
d(on)
V
DD
= 15 V, I
D
= 3 A,
7
ns
Rise Time
t
r
V
GS
= 10 V,
4
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
Ω
21
ns
Fall Time
t
f
5
ns
Total Gate Charge
Q
G
I
D
= 5 A,
10
nC
Gate to Source Charge
Q
GS
V
DD
= 24 V,
1.5
nC
Gate to Drain Charge
Q
GD
V
GS
= 10 V
2.7
nC
Body Diode Forward Voltage
Note
V
F(S-D)
I
F
= 5 A, V
GS
= 0 V
0.86
V
Reverse Recovery Time
t
rr
I
F
= 5 A, V
GS
= 0 V,
20
ns
Reverse Recovery Charge
Q
rr
di/dt = 50 A/
μ
s
16
nC
Note
Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 3 GATE CHARGE
V
GS
= 20
→
0 V
PG.
R
G
= 25
Ω
50
Ω
D.U.T.
L
V
DD
PG.
D.U.T.
R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
R
G
PG.
I
G
= 2 mA
50
Ω
D.U.T.
R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
τ
= 1
μ
s
Duty Cycle
≤
1%
τ
V
GS
Wave Form
DS
Wave Form
V
GS
V
DS
10%
0
0
90%
90%
90%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10%
10%
<R>
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