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| 型号： | UPC2776TB-E3 |
| 厂商： | CEL |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MMIC AMP 2.7GHZ SOT 363 |
| 产品目录绘图： | NE69, UP Series |
| 标准包装： | 1 |
| 频率： | 2.3GHz ~ 2.7GHz |
| P1dB： | 4dBm（2.5mW）~ 6dBm（4mW） |
| 增益： | 21dB ~ 26dB |
| 噪音数据： | 6dB ~ 7.5dB |
| RF 型： | WLAN，DBS，TVRO，PCS，WLL |
| 电源电压： | 4.5 V ~ 5.5 V |
| 电流 - 电源： | 18mA ~ 33mA |
| 测试频率： | 1GHz |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 包装： | 剪切带 (CT) |
| 产品目录页面： | 578 (CN2011-ZH PDF) |
| 其它名称： | UPC2776TB UPC2776TB-ND UPC2776TBCT |
UPC2776TB
BIPOLAR ANALOG INTEGRATED CIRCUIT
5 V, SUPER MINIMOLD
SILICON RFIC WIDEBAND AMPLIFIER
FEATURES
? WIDE FREQUENCY RESPONSE: 2.7 GHz
? FLAT GAIN RESPONSE: ± 1.0 dB
? HIGH GAIN: 23 dB
? MEDIUM OUTPUT POWER: P 1dB: 6.0 dBm at 1.0 GHz
? 5 V SINGLE SUPPLY VOLTAGE
? SMALL SURFACE MOUNT PACKAGE: SOT-363
? AVAILABLE ON TAPE AND REEL
30
25
20
GAIN vs. FREQUENCY
15
DESCRIPTION
The UPC2776TB is a Silicon Monolithic integrated circuit
which is manufactured using the NESAT?III process. This
device is suitable for wide band IF blocks due to its high gain
and flat response. The UPC2776TB is pin compatible and
has comparable performance as the larger UPC2776T, so it
is suitable for use as a replacement to help reduce system
size. The IC is housed in a 6 pin super minimold or SOT-363
package. The UPC2776TB is designed as a low cost IC gain
stage in DBS, TVRO, PCS, WLAN and other communication
receivers.
10
0
TEST CIRCUIT
0.5
1.0 1.5 2.0 2.5 3.0
Frequency, f (GHz)
V CC
1000 pF
L = 1000 nH
6
50 Ω
IN
C 1
1000 pF
1
2, 3, 5
4
C 2
1000 pF
50 Ω
OUT
ELECTRICAL CHARACTERISTICS
(V CC = 5.0 V, T A = 25 ° C, Z L = Z S = 50 Ω )
P A R T N U M B E R
P A C K A G E O U T L I N E
U P C 2 7 7 6 T B
S 0 6
S Y M B O L S
I CC
G S
f U
Δ G S
P 1dB
N F
RL IN
RL OUT
I S O L
P SAT
IM 3
P A R A M E T E R S A N D C O N D I T I O N S
C i r c u i t C u r r e n t ( n o s i g n a l )
S m a l l S i g n a l G a i n , f = 1 G H z
Upper Limit Operating Frequency
( T h e g a i n a t f u i s 3 d B d o w n f r o m t h e g a i n a t 0 . 1 G H z )
G a i n F l a t n e s s , f = 0 . 1 t o 2 . 0 G H z
O u t p u t P o w e r a t 1 d B C o m p r e s s i o n , f = 1 G H z
N o i s e F i g u r e , f = 1 G H z
I n p u t R e t u r n L o s s , f = 1 G H z
O u t p u t R e t u r n L o s s , f = 1 G H z
I s o l a t i o n , f = 1 G H z
S a t u r a t e d O u t p u t P o w e r , f = 1 G H z
3rd Order Intermodulation Distortion, f = 1 G H z
P O = 0 dBm each tone, f 1 = 1000 MHz, f 2 = 1002 MHz
U N I T S
m A
d B
G H z
d B
d B m
d B
d B
d B
d B
d B m
d B c
M I N
1 8
2 1
2 . 3
+ 4
4 . 5
1 5
2 7
T Y P
2 5
2 3
2 . 7
± 1.0
+ 6 . 0
6 . 0
7 . 5
2 0
3 2
8 . 5
- 3 0
M A X
3 3
2 6
7 . 5
The information in this document is subject to change without notice. Before using this document, please confirm
that this is the latest version.
Date Published: June 28, 2005
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