参数资料
型号: uPSD3212C
厂商: 意法半导体
英文描述: Flash Programmable System Devices with 8032 Microcontroller Core and 16Kbit SRAM(带8032微控制器内核和16Kbit SRAM的FLASH可编程系统器件)
中文描述: 闪存可编程系统设备与8032微控制器内核和16Kbit的SRAM(带8032微控制器内核和16Kbit SRAM的的闪存可编程系统器件)
文件页数: 131/151页
文件大小: 1194K
代理商: UPSD3212C
131/151
uPSD3212C, uPSD3212CV
Table 97. External Data Memory AC Characteristics (with the 3V MCU Module)
Note: 1. Conditions (in addition to those in Table 87, V
CC
= 3.0 to 3.6V): V
SS
= 0V; C
L
for Port 0, ALE and PSEN output is 100pF, for 5V
devices, and 50pF for 3V devices; C
L
for other outputs is 80pF, for 5V devices, and 50pF for 3V devices)
Table 98. A/D Analog Specification
Symbol
Parameter
(1)
24MHz Oscillator
Variable Oscillator
1/t
CLCL
= 8 to 24MHz
Unit
Min
Max
Min
Max
t
RLRH
RD pulse width
180
6t
CLCL
– 70
ns
t
WLWH
WR pulse width
180
6t
CLCL
– 70
ns
t
LLAX2
Address hold after ALE
56
2t
CLCL
– 27
ns
t
RHDX
RD to valid data in
118
5t
CLCL
– 90
ns
t
RHDX
Data hold after RD
0
0
ns
t
RHDZ
Data float after RD
63
2t
CLCL
– 20
ns
t
LLDV
ALE to valid data in
200
8t
CLCL
– 133
ns
t
AVDV
Address to valid data in
220
9t
CLCL
– 155
ns
t
LLWL
ALE to WR or RD
75
175
3t
CLCL
– 50
t
CLCL
+ 50
ns
t
AVWL
Address valid to WR or RD
67
4t
CLCL
– 97
ns
t
WHLH
WR or RD High to ALE High
17
67
t
CLCL
– 25
t
CLCL
+ 25
ns
t
QVWX
Data valid to WR transition
5
t
CLCL
– 37
ns
t
QVWH
Data set up before WR
170
7t
CLCL
– 122
ns
t
WHQX
Data hold after WR
15
t
CLCL
– 27
ns
t
RLAZ
Address float after RD
0
0
ns
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
AV
REF
Analog Power Supply Input
Voltage Range
V
SS
V
CC
V
V
AN
Analog Input Voltage Range
V
SS
– 0.3
AV
REF
+ 0.3
V
I
AVDD
Current Following between V
CC
and V
SS
200
μA
CA
IN
Overall Accuracy
±2
l.s.b.
N
NLE
Non-Linearity Error
±2
l.s.b.
N
DNLE
Differential Non-Linearity Error
±2
l.s.b.
N
ZOE
Zero-Offset Error
±2
l.s.b.
N
FSE
Full Scale Error
±2
l.s.b.
N
GE
Gain Error
±2
l.s.b.
T
CONV
Conversion Time
at 8MHz clock
20
μs
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