UTC US108S/N
SCR
UTC UNISONIC TECHNOLOGIES CO., LTD.
2
QW-R301-012,B
UTC US108S(SENSITIVE) ELECTRICAL CHARACTERISTICS
(Tj=25℃unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX.
UNIT
Gate trigger Current
IGT
VD = 12 V, RL =140
200
A
Gate trigger Voltage
VGT
VD = 12 V, RL=140
0.8
V
Gate non-trigger voltage
VGD
VD = VDRM, RL = 3.3 k
, RGK = 220
Tj = 125°C
0.1
V
Reverse gate voltage
VRG
IRG = 10 A
8
V
Holding Current
IH
IT = 50 mA, RGK = 1 k
5
mA
Latching Current
IL
IG = 1 mA ,RGK = 1 k
6
mA
Circuit Rate Of Change Of
off-state Voltage
dV/dt
VD = 65 % VDRM ,RGK = 220
Tj = 125°C
5
V/s
On-state voltage
VTM
ITM = 16A, tp = 380 s
Tj = 25°C
1.6
V
Threshold Voltage
Vt0
Tj = 125°C
0.85
V
Dynamic Resistance
Rd
Tj = 125°C
46
mΩ
Off-state Leakage Current
IDRM
IRRM
VDRM = VRRM, RGK = 220
Tj = 25°C
Tj = 125°C
5
1
A
mA
UTC US108N(STANDARD) ELECTRICAL CHARACTERISTICS
(Tj=25℃unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX.
UNIT
Gate trigger Current
IGT
VD = 12 V, RL =33
2
15
mA
Gate trigger Voltage
VGT
VD = 12 V, RL=33
1.3
V
Gate non-trigger voltage
VGD
VD = VDRM, RL = 3.3 k
, Tj = 125°C
0.2
V
Holding Current
IH
IT = 100 mA, Gate open
30
mA
Latching Current
IL
IG = 1.2 IGT
70
mA
Circuit Rate Of Change Of
off-state Voltage
dV/dt
VD = 67 % VDRM , Gate open,Tj = 125°C
150
V/s
On-state voltage
VTM
ITM = 16A, tp = 380 s, Tj = 25°C
1.6
V
Threshold Voltage
Vt0
Tj = 125°C
0.85
V
Dynamic Resistance
Rd
Tj = 125°C
46
mΩ
Off-state Leakage Current
IDRM
IRRM
VDRM = VRRM
Tj = 25°C
Tj = 125°C
5
2
A
mA
THERMAL RESISTANCES
PARAMETER
SYMBOL
VALUE
UNIT
Junction to case (DC)
Rth(j-c)
20
K/W
Junction to ambient (DC)
Rth(j-a)
60
K/W