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参数资料
| 型号： | US1J-E3 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AC |
| 封装： | LEAD FREE, PLASTIC, SMA, 2 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 418K |
| 代理商： | US1J-E3 |
US1A thru US1M
Document Number 88768
05-Aug-05
Vishay General Semiconductor
www.vishay.com
1
DO-214AC (SMA)
Surface Mount Ultrafast Rectifier
Major Ratings and Characteristics
IF(AV)
1.0 A
VRRM
50 V to 1000 V
IFSM
30 A
trr
50 ns, 75 ns
VF
1.0 V, 1.7 V
Tj max.
150 °C
Features
Low profile package
Ideal for automated placement
Glass passivated chip junction
Ultrafast reverse recovery time
Low switching losses, high efficiency
High forward surge capability
Meets MSL level 1, per J-STD-020C
Solder Dip 260 °C, 40 seconds
Typical Applications
For use in high frequency rectification and freewheel-
ing application in switching mode converters and
inverters for consumer, computer, automotive and
Telecommunication
Mechanical Data
Case: DO-214AC (SMA)
Epoxy meets UL-94V-0 Flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes cathode end
Maximum Ratings
TA = 25 °C unless otherwise specified
Parameter
Symbol
US1A
US1B
US1D
US1G
US1J US1K US1M
Units
Device Marking Code
UA
UB
UD
UG
UJ
UK
UM
Maximum repetitive peak reverse voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC blocking voltage
VDC
50
100
200
400
600
800
1000
V
Maximum average forward rectified current at TL = 110 °C
IF(AV)
1.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
30
A
Operating and storage temperature range
TJ, TSTG
- 55 to + 150
°C
相关PDF资料 |
PDF描述 |
|---|---|
| US1K-HE3 | 1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC |
| US1AP | 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC |
| US1BP | 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC |
| USB-AB1011-M040 | INTERCONNECTION DEVICE |
| USB010/5M00 | INTERCONNECTION DEVICE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| US1J-E3/11T | 功能描述:整流器 600 Volt 1.0A 75ns 30 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| US1J-E3/1T | 功能描述:整流器 600 Volt 1.0A 75ns 30 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| US1J-E3/2G | 制造商:Vishay Semiconductors 功能描述:ULTRA FAST RECOVERY RECTFR 600V 1A 2PIN SMA - Tape and Reel 制造商:Vishay Intertechnologies 功能描述:Diode Switching 600V 1A 2-Pin SMA T/R |
| US1J-E3/2GT | 功能描述:整流器 600 Volt 1.0A 75ns 30 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| US1J-E3/51T | 功能描述:整流器 600 Volt 1.0A 75ns 30 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
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