参数资料
| 型号： | USB2SERA10CFK |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 8/28页 |
| 文件大小： | 0K |
| 描述： | USB TO SERIAL BRIDGE |
| 标准包装： | 490 |
| 特点： | USB 至 UART |
| 通道数： | 1，UART |
| FIFO's： | 512 字节 |
| 规程： | RS232，RS485，USB 2.0 |
| 电源电压： | 2.7 V ~ 5.5 V |
| 带自动流量控制功能： | 是 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 24-VQFN 裸露焊盘 |
| 供应商设备封装： | 24-QFN 裸露焊盘（5x5） |
| 包装： | 托盘 |
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USB2SERA10 Data Sheet, Rev. 2
Electrical Characteristics
Freescale Semiconductor
16
Solving Equation 1 and Equation 2 for K gives:
Eqn. 3
Where K is a constant pertaining to the particular part. K can be determined from Equation 3 by measuring PD (at equilibrium)
for a known TA. Using this value of K, the values of PD and TJ can be obtained by solving Equation 1 and Equation 2 iteratively
for any value of TA.
A.4
Electrostatic Discharge (ESD) Protection Characteristics
Although damage from static discharge is much less common on these devices than on early CMOS circuits, normal handling
precautions must be used to avoid exposure to static discharge. Qualification tests are performed to ensure that these devices
can withstand exposure to reasonable levels of static without suffering any permanent damage. This device was qualified to
AEC-Q100 Rev E. A device is considered to have failed if, after exposure to ESD pulses, the device no longer meets the device
specification requirements. Complete DC parametric and functional testing is performed per the applicable device specification
at room temperature followed by hot temperature, unless specified otherwise in the device specification.
A.5
DC Characteristics
This section includes information about power supply requirements, I/O pin characteristics, and power supply current in various
operating modes.
Table A-4. ESD Protection characteristics
Rating
Symbol
Value
Unit
ESD Target for Machine Model (MM) — MM
circuit description
VTHMM
200
V
ESD Target for Human Body Model (HBM)
— HBM circuit description
VTHHBM
2000
V
Table A-5. ESD Protection characteristics
Num
C
Parameter
Symbol
Min
Typical1
Max
Unit
1
Operating voltage
—
2.7
—
5.5
V
2
P
Output high voltage
5 V, ILoad = –10 mA
3 V, ILoad = –3 mA
5 V, ILoad = –2 mA
3 V, ILoad = –0.4 mA
VOH
V
DD – 1.5
V
DD – 1.5
V
DD – 0.8
V
DD – 0.8
—
V
Output low voltage — Low drive (PTxDSn = 0)
5 V, ILoad = 2 mA
3 V, ILoad = 0.6 mA
5 V, ILoad = 0.4 mA
3 V, ILoad = 0.24 mA
VOH
1.5
0.8
—
3
P
Output low voltage — High drive (PTxDSn = 1)
5 V, ILoad = 10 mA
3 V, ILoad = 3 mA
5 V, ILoad = 2 mA
3 V, ILoad = 0.4 mA
1.5
0.8
—
V
KP
D
T
A
273
C
+
JA
P
D
2
+
=
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