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参数资料
| 型号： | UZXMN6A11GTC |
| 厂商： | DIODES INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 3800 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SOT-223, 4 PIN |
| 文件页数： | 2/7页 |
| 文件大小： | 1117K |
| 代理商： | UZXMN6A11GTC |
ZXMN6A11G
ISSUE 3 - NOVEMBER 2004
2
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
VGS
20
V
Continuous Drain Current VGS=10V; TA=25°C
(b)
VGS=10V; TA=70°C
(b)
VGS=10V; TA=25°C
(a)
ID
3.8
3.0
2.7
A
Pulsed Drain Current
(c)
IDM
10
A
Continuous Source Current (Body Diode)
(b)
IS
5A
Pulsed Source Current (Body Diode)
(c)
ISM
10
A
Power Dissipation at TA=25°C
(a)
Linear Derating Factor
PD
2.0
16
W
mW/°C
Power Dissipation at TA=25°C
(b)
Linear Derating Factor
PD
3.9
31
W
mW/°C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient
(a)
RθJA
62.5
°C/W
Junction to Ambient
(b)
RθJA
32
°C/W
THERMAL RESISTANCE
NOTES
(a)
For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b)
For a device surface mounted on FR4 PCB measured at t 5 secs.
(c)
Repetitive rating 25mm x 25mm FRA PCB, D=0.05 pulse width = 10 s - pulse width limited by maximum junction temperature.
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