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参数资料
| 型号： | UZXMN6A11GTC |
| 厂商： | DIODES INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 3800 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SOT-223, 4 PIN |
| 文件页数： | 4/7页 |
| 文件大小： | 1117K |
| 代理商： | UZXMN6A11GTC |
ZXMN6A11G
ISSUE 3 - NOVEMBER 2004
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V(BR)DSS
60
V
ID=250 A, VGS=0V
Zero Gate Voltage Drain Current
IDSS
1
AVDS=60V, VGS=0V
Gate-Body Leakage
IGSS
100
nA
VGS=±20V, VDS=0V
Gate-Source Threshold Voltage
VGS(th)
1.0
V
I
D
=250 A, VDS=VGS
Static Drain-Source On-State
Resistance
(1)
RDS(on)
0.140
0.250
VGS=10V, ID=4.4A
VGS=4.5V, ID=3.8A
Forward Transconductance
(3)
gfs
4.9
S
VDS=15V,ID=2.5A
DYNAMIC
(3)
Input Capacitance
Ciss
330
pF
VDS=40V,VGS=0V,
f=1MHz
Output Capacitance
Coss
35.2
pF
Reverse Transfer Capacitance
Crss
17.1
pF
SWITCHING
(2) (3)
Turn-On Delay Time
td(on)
1.95
ns
VDD =30V, ID=2.5A
RG=6.0 ,VGS=10V
(refer to test circuit)
Rise Time
tr
3.5
ns
Turn-Off Delay Time
td(off)
8.2
ns
Fall Time
tf
4.6
ns
Gate Charge
Qg
3.0
nC
VDS=15V, VGS=5V,
ID=2.5A
Total Gate Charge
Qg
5.7
nC
VDS=15V,VGS=10V,
ID=2.5A
(refer to test circuit)
Gate-Source Charge
Qgs
1.25
nC
Gate-Drain Charge
Qgd
0.86
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
VSD
0.85
0.95
V
TJ=25°C, IS=2.8A,
VGS=0V
Reverse Recovery Time
(3)
trr
21.5
ns
TJ=25°C, IF=2.5A,
di/dt= 100A/
s
Reverse Recovery Charge
(3)
Qrr
20.5
nC
ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Width
≤300s. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
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