参数资料
型号: V30100S-E3/4W
厂商: Vishay General Semiconductor
文件页数: 1/3页
文件大小: 144K
描述: DIODE SCHOTTKY 30A 100V TO-220AB
产品目录绘图: Circuit
标准包装: 1,000
系列: TMBS®
二极管类型: 肖特基
电压 - (Vr)(最大): 100V
电流 - 平均整流 (Io): 30A
电压 - 在 If 时为正向 (Vf)(最大): 910mV @ 30A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
电流 - 在 Vr 时反向漏电: 1mA @ 100V
安装类型: 通孔
封装/外壳: TO-220-3
供应商设备封装: TO-220AB
包装: 管件
产品目录页面: 1659 (CN2011-ZH PDF)
其它名称: V30100S-E3/4WGI
‘lllvVISHAY.)VHigh-voltage Trench Mos Barrier Schottky RectifierUltra Low VF = 0.39 V at IF = 5 A@RoHsCOMPLIANTMeets MSL level 1, per J-STD-020, LF maximum peak of
New Product
V301 00$, vF301 00$, vB301 00$, vl301 oos
Vishay General Semiconductor
TMBs?
T0-220AB
ITO-220AB
V30100S vF3o1oos
Pm‘ Plnz Pm‘ Plnz
3%) EH
PW 3 CASE Pitt 3
T0-263AB To-262AA
K /
A
No
VB30100s
NC0 K
rslNK
A
PRIMARY cHARAcTERIsTIcsFEATURES-40to+150
VFatlF:30A
- Trench MOS Schottky technology
?
Low forward voltage drop, low power losses
- High efficiency operation
- Low thermal resistance
245 °C (for TO-263AB package)- solder bath temperature 275 °C maximum, 10 s, perJEsD
22-B106 (for TO-220AB, lTO—22OAB, and TO—262AA
package)-Compliant to ROHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLIcATIoNs
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR—ing diode, dc-to—dc
converters and reverse battery protection.
MEcHANIcAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 Suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in—lbs maximum
MAXIMUM RATmGs (TA = 25 0c unless othemise noted)
PARAM ETE R
VI3D1 00SVB301 DOS
VFSD1 OOS
Maximum repetitive peak reverse voltage
Maximum average fonNard rectified current (fig. 1)
Peak fonNard surge current 8.3 ms single half
sine-wave superimposed on rated load
N
LnNon-repetitive avalanche energy at TJ : °C, L : 90 mH
Peak repetitive reverse current
attp:2tJs,1kHZ,TJ:3B°C:t2 “C
Voltage rate of change (rated VR)
Isolation voltage (ITO-220AB only)
from terminal to heatsink t : 1 minOperating junction and storage temperature range
Document Number: 88941
Revision: 23-Oct-09For technical questions within your region, please Contact one of the following:DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DIodesEurope@vishay.comwww.vishay.corn1
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