参数资料
型号: V30100S-E3/4W
厂商: Vishay General Semiconductor
文件页数: 2/3页
文件大小: 144K
描述: DIODE SCHOTTKY 30A 100V TO-220AB
产品目录绘图: Circuit
标准包装: 1,000
系列: TMBS®
二极管类型: 肖特基
电压 - (Vr)(最大): 100V
电流 - 平均整流 (Io): 30A
电压 - 在 If 时为正向 (Vf)(最大): 910mV @ 30A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
电流 - 在 Vr 时反向漏电: 1mA @ 100V
安装类型: 通孔
封装/外壳: TO-220-3
供应商设备封装: TO-220AB
包装: 管件
产品目录页面: 1659 (CN2011-ZH PDF)
其它名称: V30100S-E3/4WGI
New Product
V301 oos, vF3o1oos, vB3o1oos, Vl30100S ‘?
Vishay General Semiconductor 7
ELECTR CAL CHARACTE sTICs (TA 25 °C unless otherwise noted)
PARAMETER TEsTco~DITIoNs lmlmt
Breakdown voltage IR : 10 mA
Instantaneous forward voltage
R TA = 125 “C
105 (minimum)
TA:125°C
Reverse Current
V 100 V
TA : 125 “CNotes
W Pulse test: 300 ps pulse width, 1 % duty Cycle
‘El Pulse test: Pulse width 3 40 ms
THERMAL CHARACTE Tics (TA 25 °C unless otherwise noted)
PARAMETER VF3D1OOS VB3D1OOS V|3010OS
Typica' merma' resistance Ee
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (9) PACKAGE CODE BASE QUANTITY DELIVERY MODE
To-22oAB v3o1oos-Es/4w EIQEQ
ITO-220/?B vFso1oos-Es/4w E21
To+26sAB vBso1oos+Es/Aw $12
@151 Boo/reel Tapeandreei
TO-263AB VB3010OS-E3/8W
TO-262AA V|30100S-E3/4W
RATINGS AND CHARACTERISTICS CURVES
(TA : 25 0C unless otherwise noted)
i V(s,i)ao1oos
E E
2 V I05 30 4
2 i V is
E o‘0- Q.
LL 3
9-’) E
E 3’2 <(
( Mounted on Specilic Heatsink
0 25 5o 75 ion I25 I50 0 4 6 I2 16 20 24 25 32 36
Case Temperature (°C) Average Forward Current (A)
Fig. 1 — Forward Current Derating Curve Fig. 2 — Fonward Power Loss Characteristics
www.vishay.corn For technical questions within your region, please Contact one of the following: Document Number: 88941
2 DiodesAmericas@vishay.com, DiodesAsIa@vishay.com, DiodesEuroQe@visnay.com Revision: 23-Oct-09
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