参数资料
型号: V30120S-E3/4W
厂商: Vishay General Semiconductor
文件页数: 3/3页
文件大小: 155K
描述: DIODE 30A 120V SIGNLE SCHOTTKY
标准包装: 1,000
系列: TMBS®
二极管类型: 肖特基
电压 - (Vr)(最大): 120V
电流 - 平均整流 (Io): 30A
电压 - 在 If 时为正向 (Vf)(最大): 1.1V @ 30A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
电流 - 在 Vr 时反向漏电: 500µA @ 120V
安装类型: 通孔
封装/外壳: TO-220-3
供应商设备封装: TO-220AB
包装: 管件
New Product
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I00
10
Instantaneous Forward Current (A)
0 0.2 0.4 0.6 0.5 1.0 1.2 1.4Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
100
3
01
0.01
Instantaneous Reverse Current (mA)
10 20 30 40 50 60 70 BO 90 100
Percent ot Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics Per Diode
10000
0o0
I00
Junction Capacitance (pF)
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance Per Diode
Document Number: 88974Revision: 24-Jun-O9
For technical questions within your region, please contact one of the following:PDD-Amer|cas@v|shay.com, PDD-As|a@vishay.com, PDD-Euroge@vishay_com 3
v3o12os, vF3o12os, vB3o12os & vi3o12os
Vishay General Semiconductor
Transient Thermal Impedance (CC/W)
:30.01 0.1 1 i0 100
t— Pulse Duration (s)
Figure 6. Typical Transient Thermal Impedance Per Diode
3
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Transient Thermal Impedance (CC/W)53Illlllllllllliii
|—
I I 0100
0.01
t— Pulse Duration (s)
Figure 7. Typical Transient Thermal Impedance Per Diode
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