参数资料
型号: V54C3256404VDUI6
厂商: PROMOS TECHNOLOGIES INC
元件分类: DRAM
英文描述: 64M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
封装: 0.400 INCH, GREEN, PLASTIC, TSOP2-54
文件页数: 16/56页
文件大小: 719K
代理商: V54C3256404VDUI6
23
V54C3256(16/80/40)4VD Rev. 1.9 August 2008
ProMOS TECHNOLOGIES
V54C3256(16/80/40)4VD
3. Read Interrupted by a Read
(Burst Length = 4, CAS latency = 2, 3)
4.1 Read to Write Interval
(Burst Length = 4, CAS latency = 3)
COMMAND
READ A
READ B
NOP
t
CK2, I/O’s
CAS latency = 2
t
CK3, I/O’s
CAS latency = 3
NOP
CLK
T0
T2
T1
T3
T4
T5
T6
T7
T8
DOUT B0
DOUT B1
DOUT B2
DOUT B3
DOUT A0
DOUT B0
DOUT B1
DOUT B2
DOUT B3
DOUT A0
tCCD
COMMAND
NOP
READ A
NOP
WRITE B
NOP
DQM
DOUT A0
DIN B0
DIN B1
DIN B2
Must be Hi-Z before
the Write Command
I/O’s
Minimum delay between the Read and Write Commands = 4+1 = 5 cycles
CLK
T0
T2
T1
T3
T4
T5
T6
T7
T8
tDQZ
tDQW
: “H” or “L”
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