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参数资料
| 型号： | V827432K24S |
| 厂商： | Mosel Vitelic, Corp. |
| 英文描述： | 2.5 VOLT 32M x 72 HIGH PERFORMANCE UNBUFFERED ECC DDR SDRAM MODULE |
| 中文描述： | 2.5伏32M × 72配置高性能无缓冲ECC DDR SDRAM内存模块 |
| 文件页数： | 10/14页 |
| 文件大小： | 211K |
| 代理商： | V827432K24S |
MOSEL VITELIC
V827432K24S
5
V827432K24S Rev.1.2 September 2002
Serial Presence Detect Information
Bin Sort:
A1 (PC1600 @ CL2)
B0 (PC2100B @ CL2.5)
B1 (PC2100A @ CL2)
C0 (PC2700 @ CL2.5)
Byte #
Function described
Function Supported
Hex value
A1
B0
B1
C0
A1
B0
B1
C0
0
Defines # of Bytes written into serial memory at module manu-
facturer
128bytes
80h
1
Total # of Bytes of SPD memory device
256bytes
08h
2
Fundamental memory type
SDRAM DDR
07h
3
# of row address on this assembly
13
0Dh
4
# of column address on this assembly
10
0Ah
5
# of module Rows on this assembly
1 Bank
01h
6
Data width of this assembly
72 bits
48h
7
.........Data width of this assembly
-
00h
8
VDDQ and interface standard of this assembly
SSTL 2.5V
04h
9
DDR SDRAM cycle time at CAS Latency =2.5
8ns
7.5ns
7ns
6ns
80h
75h
70h
60h
10
DDR SDRAM Access time from clock at CL=2.5
±0.8ns ±0.75ns±0.75ns±0.70ns
80h
75h
70h
11
DIMM configuration type(Non-parity, Parity, ECC)
Non-parity, ECC
02h
12
Refresh rate & type
7.8us & Self refresh
82h
13
Primary DDR SDRAM width
x8
08h
14
Error checking DDR SDRAM data width
x8
08h
15
Minimum clock delay for back-to-back random column
address
tCCD=1CLK
01h
16
DDR SDRAM device attributes : Burst lengths supported
2,4,8
0Eh
17
DDR SDRAM device attributes : # of banks on each DDR
SDRAM
4 banks
04h
18
DDR SDRAM device attributes : CAS Latency supported
2,2.5
0Ch
19
DDR SDRAM device attributes : CS Latency
0CLK
01h
20
DDR SDRAM device attributes : WE Latency
1CLK
02h
21
DDR SDRAM module attributes
Differential clock /
non Registered
20h
22
DDR SDRAM device attributes : General
+/-0.2V voltage tolerance
00h
23
DDR SDRAM cycle time at CL =2
10ns
7.5ns
A0h
75h
24
DDR SDRAM Access time from clock at CL =2
±0.8ns ±0.75ns±0.75ns±0.70ns
80h
75h
70h
25
DDR SDRAM cycle time at CL =1.5
-
00h
26
DDR SDRAM Access time from clock at CL =1.5
-
00h
27
Minimum row precharge time (=tRP)
20ns
18ns
50h
48h
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相关代理商/技术参数 |
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|---|---|
| V827464K24S | 制造商:MOSEL 制造商全称:MOSEL 功能描述:2.5 VOLT 64M x 72 HIGH PERFORMANCE UNBUFFERED ECC DDR SDRAM MODULE |
| V827464N24S | 制造商:MOSEL 制造商全称:MOSEL 功能描述:2.5 VOLT 64M x 72 HIGH PERFORMANCE REGISTERED ECC DDR SDRAM MODULE |
| V8290 | 制造商:Visual Effects 功能描述:Mini Strobe Light 制造商:VISUAL EFFECTS 功能描述:MINI STROBE LIGHT |
| V82MA3A | 功能描述:压敏电阻 82V 40A 120pF RoHS:否 制造商:EPCOS 产品:MLV 电压额定值 DC:22 V 电压额定值 AC:17 V 钳位电压:50 V 直径: 峰值浪涌电流:30 A 浪涌能量额定值:75 mJ 电容:74.2 pF 工作温度范围:- 55 C to + 125 C 安装:SMD/SMT 封装:Reel |
| V82MA3B | 功能描述:压敏电阻 82V 40A 120pF RoHS:否 制造商:EPCOS 产品:MLV 电压额定值 DC:22 V 电压额定值 AC:17 V 钳位电压:50 V 直径: 峰值浪涌电流:30 A 浪涌能量额定值:75 mJ 电容:74.2 pF 工作温度范围:- 55 C to + 125 C 安装:SMD/SMT 封装:Reel |
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