参数资料
型号: VB20100S-E3/4W
厂商: Vishay General Semiconductor
文件页数: 2/3页
文件大小: 150K
描述: DIODE 20A 100V SGL SCHOTTKY
标准包装: 1,000
系列: TMBS®
二极管类型: 肖特基
电压 - (Vr)(最大): 100V
电流 - 平均整流 (Io): 20A
电压 - 在 If 时为正向 (Vf)(最大): 900mV @ 20A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
电流 - 在 Vr 时反向漏电: 500µA @ 100V
安装类型: 表面贴装
封装/外壳: TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装: TO-263AB
包装: 管件
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V201 00$, VF201 00$, VB201 00$, V|201 00$
www'ViShay'C°m Vishay General Semiconductor
ELEcTRIcAL cHARAcTERIsTIcs (TA = 25 0C unless otherwise noted)
PARAMETER
Breakdown voltage
TEST CON DITIONS
lR:10mA
E1 TA=125°C J11
Instantaneous forward voltage
TA:125°C
TA:125°C
Reverse current
N ates(I) Pulse test: 300 us pulse width, 1 % duty cycle(2) Pulse test: Pulse width g 40 ms
THERMAL cHARAcTERIsTIcs (TA = 25 0C unless otherwise noted)
PARAMETER vF2o1oos vB2o1ooS vl2o1oosPREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
Typica' therma' resistance Tie
TO 220AB
V2010OS-E3/AWVF20100S-E3/4W
ITO-220AB
TO-263AB
VB20100S-E3/4W
TO-263AB
VB20100S-E3/8W800/reelTape and reel
TO-262AA
V|20100S-E3/4W
RATINGS AND cHARAcTERIsTIcs cuRvEs75 I00I6 20 24
(TA = 25 0C unless otherwise noted)
Resistive or Inductive Load
VB2oIooS
Average Forward Current (A)
I25Average Power Loss (W)
Case Temperature ("C)
Fig. 1 — Maximum Forward Current Derating Curve
Revision: 14-Aug-13
2
0 4 E Q
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
Document N umber: 88975
For technical questions within your region: DiodesArnericas@visliay.Corn, DiodesAsia@vishay.com, DiodesEurope@Vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.oomzdoo?91000
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