- 您现在的位置：买卖IC网 > PDF目录300087 > VB40150C-E3/4W (VISHAY SEMICONDUCTORS) 20 A, 150 V, SILICON, RECTIFIER DIODE, TO-263AB PDF资料下载
参数资料
| 型号： | VB40150C-E3/4W |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 20 A, 150 V, SILICON, RECTIFIER DIODE, TO-263AB |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 2/5页 |
| 文件大小： | 156K |
| 代理商： | VB40150C-E3/4W |
New Product
V40150C, VF40150C, VB40150C & VI40150C
Vishay General Semiconductor
www.vishay.com
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 89048
Revision: 24-Jun-09
2
Notes
(1) Pulse test: 300 s pulse width, 1 % duty cycle
(2) Pulse test: Pulse width
≤ 40 ms
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
Breakdown voltage
IR = 1.0 mA
TA = 25 °C
VBR
150 (minimum)
-
V
Instantaneous forward voltage per diode (1)
IF = 5 A
IF = 10 A
IF = 20 A
TA = 25 °C
VF
0.69
0.84
1.15
-
1.43
V
IF = 5 A
IF = 10 A
IF = 20 A
TA = 125 °C
0.55
0.64
0.75
-
0.82
Reverse current per diode (2)
VR = 100 V
TA = 25 °C
TA = 125 °C
IR
2
2.5
-
A
mA
VR = 150 V
TA = 25 °C
TA = 125 °C
-
5
250
25
A
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V40150C
VF40150C
VB40150C
VI40150C
UNIT
Typical thermal resistance per diode
RθJC
1.8
4
1.8
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AB
V40150C-E3/4W
1.89
4W
50/tube
Tube
ITO-220AB
VF40150C-E3/4W
1.75
4W
50/tube
Tube
TO-263AB
VB40150C-E3/4W
1.39
4W
50/tube
Tube
TO-263AB
VB40150C-E3/8W
1.39
8W
800/reel
Tape and reel
TO-262AA
VI40150C-E3/4W
1.46
4W
50/tube
Tube
Figure 1. Maximum Forward Current Derating Curve
Case Temperature (°C)
A
v
erage
For
w
ard
Rectified
C
u
rrent
(A)
50
30
0
25
50
75
100
125
150
175
V(B,I)40150C
Resistive or Inductive Load
Mounted on Specific Heatsink
20
10
VF40150C
40
Figure 2. Forward Power Loss Characteristics Per Diode
0
2
6
20
02
8
12
Average Forward Current (A)
A
v
erage
Po
w
er
Loss
(
W
)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
6
4
12
10
4
16
8
20
16
24
18
10
14
18
14
22
D = t
p/T
t
p
T
相关PDF资料 |
PDF描述 |
|---|---|
| VBRM-3.3 | 1-OUTPUT DC-DC REG PWR SUPPLY MODULE |
| VBRM-3 | 1-OUTPUT DC-DC REG PWR SUPPLY MODULE |
| VC-2R2A30-1359 | VCO, 1347 MHz - 1371 MHz |
| VC-2R8A24-1167/1617 | VCO, 1150 MHz - 1185 MHz |
| VC75H50BS-FREQ | VCXO, CLOCK, 8 MHz - 70 MHz, CMOS OUTPUT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| VB40150C-E3-8W | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual High-Voltage Trench MOS Barrier Schottky Rectifier5 |
| VB40170C | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
| VB40170C-E3 | 制造商:Vishay Semiconductors 功能描述:DIODE SCHOTTKY 170V 40A TO 制造商:Vishay Semiconductors 功能描述:DIODE, SCHOTTKY, 170V, 40A, TO263AB; Diode Type:Schottky; Diode Configuration:Dual Common Cathode; Repetitive Reverse Voltage Vrrm Max:170V; Forward Current If(AV):40A; Forward Voltage VF Max:1.2V; Forward Surge Current Ifsm ;RoHS Compliant: Yes |
| VB40170C-E3/4W | 功能描述:肖特基二极管与整流器 40A 170V TrenchMOS RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| VB40170C-E3/8W | 功能描述:肖特基二极管与整流器 40A 170V TrenchMOS RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
发布紧急采购，3分钟左右您将得到回复。