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参数资料
| 型号： | VBUS052BD-HTF-GS08 |
| 厂商： | Vishay Semiconductors |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | TVS DUAL DIODE BI 5 |
| 标准包装： | 1 |
| 电压 - 反向隔离（标准值）： | 5V |
| 电压 - 击穿： | 6.9V |
| 功率（瓦特）： | 45W |
| 电极标记： | 2 通道阵列 - 双向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 4-SMD |
| 供应商设备封装： | 4-LLP75 |
| 包装： | 标准包装 |
| 其它名称： | VBUS052BD-HTF-GS08DKR |
VBUS052BD-HTF
www.vishay.com
Vishay Semiconductors
APPLICATION NOTE
The VBUS052BD-HTF is a two-line ESD-protection device with the characteristic of a Z-diode with a high ESD-immunity and a
very low capacitance which makes it usable for high frequency applications like USB2.0 or HDMI. ?
With the VBUS052BD-HTF two high speed data lines can be protected against transient voltage signals like ESD (electro static
discharge). Connected to the data line (pin 1 and 2) and to ground (pin 3) negative transients will be clamped close below the
ground level while positive transients will be clamped close above the 5 V working range. The clamping behaviour of the
VBUS052BD-HTF is bidirectional but asymmetrical (BiAs) and so it offers the best protection for applications running up to 5 V.
ELECTRICAL CHARACTERISTICS VBUS052BD-HTF
PARAMETER
Protection paths
Reverse stand-off voltage
Reverse current
Reverse breakdown voltage
Reverse clamping voltage
Forward clamping voltage
TEST CONDITIONS/REMARKS
Number of lines which can be protected
at I R = 0.1 μA; pin 1 or pin 2 to pin 3
at V R = V RWM = 5 V; pin 1 or pin 2 to pin 3
at I R = 1 mA; pin 1 or pin 2 to pin 3
at I PP = 3 A, acc. IEC 61000-4-5;
pin 1 or pin 2 to pin 3
at I F = 3 A, acc. IEC 61000-4-5;
pin 3 to pin 1 or pin 2
SYMBOL
N channel
V RWM
I R
V BR
V C
V F
MIN.
-
-
-
6.9
-
-
TYP.
-
-
< 0.01
7.9
-
4.8
MAX.
2
5
0.1
8.7
16
6
UNIT
lines
V
μA
V
V
V
Capacitance at V R = 0 V; f = 1 MHz; pin 1 or pin 2 to pin 3
C D
-
1.5
2.5
pF
Note
? Ratings at 25 °C, ambient temperature unless otherwise specified.
TYPICAL CHARACTERISTICS
T amb = 25 °C, unless otherwise specified
120 %
100 %
Rise time = 0.7 ns to 1 ns
2.5
2.0
f = 1 MHz
80 %
1.5
60 %
53 %
1.0
40 %
27 %
20 %
0%
0.5
0.0
- 10 0 10 20 30 40 50 60 70 80 90 100
0
1
2
3
4
5
6
20557
Time (ns)
20942
V IN (V)
Fig. 1 - ESD Discharge Current Wave Form
acc. IEC 61000-4-2 (330 ? /150 pF)
Fig. 3 - Typical Capacitance C D vs. Reverse Voltage V R
100
100 %
8 μs to 100 %
10
80 %
60 %
40 %
20 %
0%
20 μs to 50 %
1
0.1
0.01
0.001
0
10
20
30
40
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
20548
Time (μs)
20943
V F (V)
Fig. 2 - 8/20 μs Peak Pulse Current Wave Form
acc. IEC 61000-4-5
Fig. 4 - Typical Forward Current I F vs. Forward Voltage V F
Rev. 1.5, 15-Jan-14
2
Document Number: 81788
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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相关代理商/技术参数 |
参数描述 |
|---|---|
| VBUS052CD-FAH | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:2-Line BUS-Port ESD-Protection - Flow Through Design |
| VBUS052CD-FAH-GS08 | 功能描述:ESD 抑制器 5.0 Volt 63 Watt 2-Line BUS Port RoHS:否 制造商:STMicroelectronics 通道:8 Channels 击穿电压:8 V 电容:45 pF 端接类型:SMD/SMT 封装 / 箱体:uQFN-16 功率耗散 Pd: 工作温度范围:- 40 C to + 85 C |
| VBUS053AZ-HAF | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:USB-OTG BUS-Port ESD-Protection for VBUS = 12 V |
| VBUS053AZ-HAF-GS08 | 功能描述:ESD 抑制器 5.5 Volt 36 Watt 3-Line USB Port RoHS:否 制造商:STMicroelectronics 通道:8 Channels 击穿电压:8 V 电容:45 pF 端接类型:SMD/SMT 封装 / 箱体:uQFN-16 功率耗散 Pd: 工作温度范围:- 40 C to + 85 C |
| VBUS053BZ-HNH-G-08 | 制造商:Vishay Semiconductors 功能描述:ESD PROTECTION DIODE LLP1713-E4-G |
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