参数资料
型号: VBUS052BD-HTF-GS08
厂商: Vishay Semiconductors
文件页数: 3/6页
文件大小: 0K
描述: TVS DUAL DIODE BI 5
标准包装: 1
电压 - 反向隔离(标准值): 5V
电压 - 击穿: 6.9V
功率(瓦特): 45W
电极标记: 2 通道阵列 - 双向
安装类型: 表面贴装
封装/外壳: 4-SMD
供应商设备封装: 4-LLP75
包装: 标准包装
其它名称: VBUS052BD-HTF-GS08DKR
VBUS052BD-HTF
9
8
7
6
www.vishay.com
20
0
- 20
- 40
Vishay Semiconductors
5
4
3
2
1
- 60
- 80
- 100
- 120
- 140
Acc. IEC 61000-4-2
- 8 kV
contact discharge
0
0.01
0.1
1
10
100
1000 10 000
- 160
- 10 0 10 20 30 40 50 60 70 80 90
20944
I R (μA)
20947
t (ns)
Fig. 5 - Typical Reverse Voltage V R vs. Reverse Current I R
20
Fig. 8 - Typical Clamping Performance at - 8 kV
Contact Discharge (acc. IEC 61000-4-2)
200
15
10
Positive surge
150
100
50
Positive discharge
Acc. IEC 61000-4-2
contact discharge
5
0
-5
Measured
acc. IEC 61000-4-5
(8/20 μs - wave form)
V C
0
- 50
- 100
- 150
V C-ESD
Negative surge
- 200
Negative discharge
- 10
0
1
2
3
4
- 250
0
5
10
15
20
20945
I PP (A)
20948
V ESD (kV)
Fig. 6 - Typical Clamping Voltage vs.
Peak Pulse Current I PP
120
Acc. IEC 61000-4-2
Fig. 9 - Typical Peak Clamping Voltage at ± ESD Contact Discharge
(acc. IEC 61000-4-2)
100
+ 8 kV
contact discharge
80
60
40
20
0
- 20
- 10 0
20946
10 20 30 40 50 60 70 80 90
t (ns)
Fig. 7 - Typical Clamping Performance at + 8 kV
Contact Discharge (acc. IEC 61000-4-2)
Rev. 1.5, 15-Jan-14
3
Document Number: 81788
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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