参数资料
型号: VF20100SG-E3/4W
厂商: Vishay General Semiconductor
文件页数: 2/3页
文件大小: 144K
描述: DIODE 20A 100V SGL SCHOT TO220-3
标准包装: 1,000
系列: TMBS®
二极管类型: 肖特基
电压 - (Vr)(最大): 100V
电流 - 平均整流 (Io): 20A
电压 - 在 If 时为正向 (Vf)(最大): 1.07V @ 20A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
电流 - 在 Vr 时反向漏电: 350µA @ 100V
安装类型: 通孔
封装/外壳: TO-220-3 隔离片
供应商设备封装: ITO-220AB
包装: 管件
New Product
v2o1oosG, vF2o1oosG, vB2o1oosG, vl2o1oosG ‘?
Vishay General Semiconductor 7
ELEcTRIcAL cHARAcTERIsTIcs (TA = 25 cc unless otherwise notedBreakdown voltage IR : 10 mA 105 (minimum)
PARAMETER TEST CONDITIONS
Instantaneous forward voltage
TA : 125 00
Reverse currentTA: 125 “C
TA=125°C R
Notes
(‘) Pulse test: 300 us pulse width, 1 °/c duty cycle
(2) Pulse test: Pulse width g 40 ms
THERMAL cHARAcTERls cs (TA = 25 DC unless otherwise noted)
PARAMETER V201 DOSG VF20100SG VB20100SG V|20100SG
Typical lhermal resistance 3 E
ORDE FORMA N (Example)
PREFERRED P/N UNIT WEIGHT (9) PACKAGE CODE BASE QUANTITV DELIVERY MODE
To-22oAB vzoroose-E3/4w £21
ITO-220AB VF20100SG-E3/4W
TO-263AB VB20100SG-E3/4W
n BOO/reel Tape and reel
TO-263AB VB20100SG-E3/BW
TO-262AA V|20100SG?E3/4W
RATINGS AND cHARAcTERIsTIcs cuRVEs
(TA : 25 °C unless othem/ise noted)
Resistive or Irlducllve Load
A v201o0SG3 vl2ol0oSG AE vB20l00SG E
f‘.:> in
5 E
‘E 5In E
o
E D.F 3
% EE 3G) <(
5
0 4 E Q m M M
Case Temperature (“C) Average Forward Current (A)
Fig. 1 - Maximum Forward Current Deraling Cuwe Fig. 2 - Forward Power Loss Characteristics
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 88966
2 DrodesAmencas@vishay.oom, DiodesAsia@vishay_oom, DlodesEuroge@vrshay.com Revision: 08-Ool-09
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