参数资料
型号: VF30120S-E3/4W
厂商: Vishay General Semiconductor
文件页数: 1/3页
文件大小: 155K
描述: DIODE SCHOTTKY 30A 120V TO220-3
标准包装: 1,000
系列: TMBS®
二极管类型: 肖特基
电压 - (Vr)(最大): 120V
电流 - 平均整流 (Io): 30A
电压 - 在 If 时为正向 (Vf)(最大): 1.1V @ 30A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
电流 - 在 Vr 时反向漏电: 500µA @ 120V
安装类型: 通孔
封装/外壳: TO-220-3 隔离片
供应商设备封装: ITO-220AB
包装: 管件
New Product1 v3o12os, vF3o12os, vB3o12os & vl3o12osVISHM ____________________________________________7 Vishay General SemiconductorHigh-voltage Trench Mos Barrier schottky RectifierUltra Low VF = 0.43 v at IF = 5 A
? FEATUHESTMBS ?
To_22oAB lTo_22oAB 0 Trench MOS Schottky technology
- Low forward voltage drop, low powerlosses
. High efficiency operation ROHS
- Meets MSL level 1, per J—sTD-020, LF °°MPL"‘"‘
maximum peak or 245 cc (tor To-263AB package)
- solder bath temperature 275 DC maximum, 10 s,
per JESD 22—B106 (tor To-22oAB, lTO—22oAB,and TO—262AA package)
- Compliant to FioHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
V30120S
PW ‘ PlN 2
:r?o
PIN 3 CASE
TO-2G3AB T0-262AA
TYPIcAL APPLIcATIoNsFor use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
MEcHANIcAL DATA
VB30120S VI30120Scase: To-22oAB, lTo—22oAB, To-263AB and
No 0 K PW‘ Pm 2
l—O ::l>H~O TO—262AA
A HEATSINK FW 3 k
Molding compound meets UL 94 v-0 flammability
rating
PRIMARY cHABAcTEnIsTIcs Base P/N—E3 — RoHs compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-sTD—oo2 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM nA'nNGs (TA = 25 cc unless otherwise noted)
@@
Peak fonrvard surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Peak repetitive reverse current
attp:2us,1kHz,TJ:38°Ci2°CVoltage rate of change (rated VR)
Isolation voltage (ITO-22OAB only)
from terminal to heatsink t :1 min
Operating junction and storage temperature range
WE@ mj:wereWW amand :25 °C,L:1o0 mH
mjwj
%Document Number: 88974 For technical questions within your region, please contact one of the following: www.vishay.com
-40to+150
Revision: 24-Jun-09 PDD-Americasovishavcom, PDD-Asiaovishaycom, PDD-Euroge@vishay_com 1
相关PDF资料
PDF描述
12LRS473C INDUCTOR RAD 47UH 1.7A T/H 10X8
GCM10DRMN CONN EDGECARD 20POS .156 WW
REC5-2412SRW/H6/C CONV DC/DC 5W 18-36VIN 12VOUT
V375C3V3C50BL3 CONVERTER MOD DC/DC 3.3V 50W
GCM10DRMH CONN EDGECARD 20POS .156 WW
相关代理商/技术参数
参数描述
VF30120SG 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 5 A
VF30120SG_10 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High-Voltage Trench MOS Barrier Schottky Rectifier
VF30120SG-E3/4W 功能描述:肖特基二极管与整流器 30 Amp 120 Volt Single TrenchMOS RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
VF30120SG-E3-4W 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High-Voltage Trench MOS Barrier Schottky Rectifier
VF30120SG-M3/4W 制造商:Vishay Semiconductors 功能描述:30A,120V,TRENCH SKY RECT.