参数资料
型号: VF30120S-E3/4W
厂商: Vishay General Semiconductor
文件页数: 2/3页
文件大小: 155K
描述: DIODE SCHOTTKY 30A 120V TO220-3
标准包装: 1,000
系列: TMBS®
二极管类型: 肖特基
电压 - (Vr)(最大): 120V
电流 - 平均整流 (Io): 30A
电压 - 在 If 时为正向 (Vf)(最大): 1.1V @ 30A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
电流 - 在 Vr 时反向漏电: 500µA @ 120V
安装类型: 通孔
封装/外壳: TO-220-3 隔离片
供应商设备封装: ITO-220AB
包装: 管件
New Product
V30120S, VF30120S, VB30120S & V|30120S ‘M
Vishay General Semiconductor 7
ELEcTRIcAL cHARAcTERIsTIcs (TA = 25 00 unless otherwise noted)
PARAMETER TEST CONDITIONS
Breakdown voltage
120 (minimum)
0.500.70
— 0.99
Instantaneous fonlvard voltage (‘l
0.43TA : 125 DC 0.600.74
Reverse Current (2’
Notes(‘) Pulse test: 300 us pulse width, 1 % duty cycle(2) Pulse test: Pulse width 3 40 ms
THERMAL cHARAcTERIsTIcs (TA = 25 DC unless othenNise noted)
PARAMETER E ORDERING NFoRMATIoN (Example)
TypiCa' therma' resisiance per diode -
0310 0
00 0
00 00000 0RATINGS AND cHARAcTERIsTIcs cuRVEs
TO?263AB VB30120S-E3/8W
TO?262AA V|30120S-E3/4W
(TA = 25 cc unless otherwise noted)
g Resisllve or Inducllve Load
9.) A
E —E — 3E — ?Dcc 5'2 02
3 E
m
3: J
§ %
o ‘Etn0 25 50 75 loo 125 150 T75 0 5 lo T5 20 25 so 35
E 29
‘“ _ (
u)><(
Case Temperature (“C) Average Fonuard Current (A)
Figure 1. Forward Current Derating Curve Figure 2. Forward Power Loss Characteristics Per Diode
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 88974
2 PDD-Americas@vishay_oom, PDD-Asia@visnay.oom, PDD-Euroge@vishay_oom Revision: 24-Jun-09
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