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参数资料
| 型号： | VHM40-06P1 |
| 厂商： | IXYS |
| 文件页数： | 1/3页 |
| 文件大小： | 0K |
| 描述： | MOSFET COOL 600V 38A ECO-PAC2 |
| 标准包装： | 25 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 600V |
| 电流 - 连续漏极(Id) @ 25° C： | 38A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 70 毫欧 @ 25A，10V |
| Id 时的 Vgs(th)（最大）： | 5.5V @ 3mA |
| 闸电荷(Qg) @ Vgs： | 220nC @ 10V |
| 安装类型： | 底座安装 |
| 封装/外壳： | ECO-PAC2 |
| 供应商设备封装： | ECO-PAC2 |
| 包装： | 盒 |
VHM 40-06P1
CoolMOS Power MOSFET
in ECO-PAC 2
N-Channel Enhancement Mode
Low R DSon , High V DSS MOSFET
Package with Electrically Isolated Base
Preliminary data
K 12
L4
L6
L9
I D25 = 38 A
V DSS = 600 V
R DSon = 70 m ?
1)
NTC
P 18
R 18
X 15
F 10
MOSFET
K 13
T 18
V 18
X 18
K 10
Applications
Pin arrangement see outlines
Symbol
Conditions
Maximum Ratings
? ECO-PAC 2 with DCB Base
V DSS
V GS
I D25
I D90
d V /dt
E AS
E AR
T VJ = 25°C to 150°C
T C = 25°C
T C = 90°C
V DS < V DSS ; I F < 50 A; | di F /dt | < 200 A/μs
T VJ = 150°C
I D = 10 A; T C = 25°C
I D = 20 A; T C = 25°C
600
± 20
38
25
6
1.8
1
V
V
A
A
V/ns
J
mJ
- Electrical isolation towards the heatsink
- Low coupling capacitance to the
heatsink for reduced EMI
- High power dissipation
- High temperature cycling capability
of chip on DCB
- solderable pins for DCB mounting
? FAST COOLMOS POWER MOSFET
- High blocking capability
- Low on resistance
Symbol
Conditions
Characteristic Values
(T VJ = 25 ° C, unless otherwise specified)
- Avalanche rated for unclamped
inductive switching (UIS)
min.
typ.
max.
- Low thermal resistance
R DSon
V GS(th)
I DSS
I GSS
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
R thJC
V GS = 10 V; I D = I D90
V DS = 20 V; I D = 3 mA
V DS = V DSS ; V GS = 0 V; T VJ = 25°C
T VJ = 125°C
V GS = ± 20 V; V DS = 0 V
V GS = 10 V; V DS = 350 V; I D = 50 A
V GS = 10 V; V DS = 380 V
I D = 25 A; R G = 1.8 ?
per MOSFET
3.5
60
220
55
125
30
95
100
10
70
5.5
25
100
0.45
m ?
V
μA
μA
nA
nC
nC
nC
ns
ns
ns
ns
K/W
due to reduced chip thickness
? ENHANCED TOTAL POWER DENSITY
Applications
? Switched mode power supplies (SMPS)
? UNINTERRUPTIBLE POWER SUPPLIES (UPS)
? POWER FACTOR CORRECTION (PFC)
? WELDING
? INDUCTIVE HEATING
Data according ot IEC 60747 refer to a single diode or transistor unless otherwise stated
IXYS reserves the right to change limits, test conditions and dimensions.
? IXYS 2009 All rights reserved
1) CoolMOS is a trademark of Infineon Technologies AG.
20091214a
1-3
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| VHO55-08io7 | 功能描述:SCR模块 55 Amps 800V RoHS:否 制造商:Vishay Semiconductors 开启状态 RMS 电流 (It RMS):260 A 不重复通态电流:4000 A 最大转折电流 IBO:4200 A 额定重复关闭状态电压 VDRM:1.6 kV 关闭状态漏泄电流（在 VDRM IDRM 下）:20 mA 开启状态电压:1.43 V 保持电流（Ih 最大值）: 栅触发电压 (Vgt): 栅触发电流 (Igt): 最大工作温度:+ 150 C 安装风格:Chassis 封装 / 箱体:INT-A-PAK |
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