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参数资料
| 型号： | VKM60-01P1 |
| 厂商： | IXYS |
| 文件页数： | 1/4页 |
| 文件大小： | 0K |
| 描述： | MOSFET H-BRIDGE 100V ECO-PAC2 |
| 标准包装： | 25 |
| 系列： | HiPerFET™ |
| FET 型： | 4 N 通道（半桥） |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 75A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 25 毫欧 @ 500mA，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 4mA |
| 闸电荷(Qg) @ Vgs： | 260nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 4500pF @ 25V |
| 功率 - 最大： | 300W |
| 安装类型： | 通孔 |
| 封装/外壳： | ECO-PAC2 |
| 供应商设备封装： | ECO-PAC2 |
| 包装： | 散装 |
VKM 60-01P1
HiPerFET TM Power MOSFET
I D25
= 75 A
H-Bridge Topology in ECO-PAC 2
V DSS = 100 V
R DSon = 25 m ?
N-Channel Enhancement Mode
High dv/dt, Low t rr , HDMOS TM Family
L4
L6
A1
t rr
< 200 ns
NTC
K 12
K 13
L9
P 18
R 18
X 15
T 18
E10
F10
K10
MOSFETs
V 18
X 18
Features
Pin arangement see outlines
Symbol
Conditions
Maximum Ratings
? HiPerFET TM technology
- low R DSon
V DSS
V DGR
V GS
V GSM
I D25
I DM
I AR
E AR
dv/dt
P D
T J = 25°C to 150°C
T J = 25°C to 150°C; R GS = 1 M ?
Continuous
Transient
T C = 25°C
T C = 25°C, pulse width limited by T JM
T C = 25°C
T C = 25°C
I S ≤ I DM , di/dt ≤ 100 A/μs, V DD ≤ V DSS ,
T J ≤ 150°C, R G = 2 ?
T C = 25°C
100
100
± 20
± 30
75
300
75
30
5
300
V
V
V
V
A
A
A
mJ
V/ns
W
- low gate charge for high frequency
operation
- unclamped inductive switching (UIS)
capability
- dv/dt ruggedness
- fast intrinsic reverse diode
? ECO-PAC 2 package
- isolated back surface
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
- solderable pins for PCB mounting
Symbol
Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
Applications
? drives and power supplies
? battery or fuel cell powered
V DSS
V GS = 0 V, I D = 250 μA
100
V
?
automotive, industrial vehicle etc.
V GS(th)
I GSS
V DS = V GS , I D = 4 mA
V GS = ±20 V DC , V DS = 0
2.0
4
± 100
V
nA
?
secondary side of mains power
supplies
I DSS
R DS(on)
V DS = 0.8 ? V DSS ; T J = 25°C
V GS = 0 V; T J = 125°C
V GS = 10 V, I D = 0.5 I D25
250
1
25
μA
mA
m ?
Pulse test, t < 300 μs, duty cycle d < 2%
g fs
C iss
C oss
C rss
t d(on)
V DS = 10 V; I D = I D25 , pulse test
V GS = 0 V, V DS = 25 V, f = 1 MHz
25
30
4500
1600
800
20
30
S
pF
pF
pF
ns
t r
t d(off)
t f
Q g(on)
Q gs
Q gd
V GS = 10 V, V DS = 0.5 ? V DSS , I D = 0.5 I D25
R G = 2 ?, (External)
V GS = 10 V, V DS = 0.5 ? V DSS , I D = 0.5 I D25
60
80
60
180
36
85
110
110
90
260
70
160
ns
ns
ns
nC
nC
nC
R thJC
R thCK
with heatsink compound (0.42 K/m.K; 50 μm)
0.25
0.5
K/W
K/W
IXYS reserves the right to change limits,
test conditions and dimensions.
? 2005 IXYS All rights reserved
1-4
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