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参数资料
| 型号： | VMM650-01F |
| 厂商： | IXYS |
| 文件页数： | 1/2页 |
| 文件大小： | 0K |
| 描述： | MOSFET MOD PHASE LEG 100V Y3-LI |
| 标准包装： | 2 |
| 系列： | HiPerFET™ |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 680A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 2.2 毫欧 @ 500A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 30mA |
| 闸电荷(Qg) @ Vgs： | 1440nC @ 10V |
| 安装类型： | 底座安装 |
| 封装/外壳： | Y3-Li |
| 供应商设备封装： | Y3-Li |
| 包装： | 散装 |
VMM 650-01F
Dual Power
HiPerFET TM Module
Phaseleg Configuration
Preliminary Data
8
3
V DSS = 100 V
I D25 = 680 A
R DS(on) = 1.8 m ?
MOSFET T1 + T2
9
11
10
6
7
NTC
1
2
Features
Symbol
Conditions
Maximum Ratings
? HiPerFET TM technology
– low R DSon
V DSS
V GS
T VJ = 25°C to 150°C
100
±20
V
V
– unclamped inductive switching (UIS)
capability
– dv/dt ruggedness
I D25
I D80
I F25
I F80
T C = 25°C
T C = 80°C
(diode) T C = 25°C
(diode) T C = 80°C
①
①
①
①
680
500
680
500
A
A
A
A
– fast intrinsic reverse diode
– low gate charge
? thermistor
for internal temperature measurement
? package
– low inductive current path
– screw connection to high current
Symbol
Conditions
Characteristic Values
(T VJ = 25 ° C, unless otherwise specified)
min. typ. max.
main terminals
– use of non interchangeable
connectors for auxiliary terminals
possible
R DSon
V GS = 10 V; I D = I D80
1.8
2.2 m ?
– Kelvin source terminals for easy drive
– isolated DCB ceramic base plate
V GSth
V DS = 20 V; I D = 30 mA
2
4
V
I DSS
I GSS
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
V DS = 0.8 ? V DSS ; V GS = 0 V; T VJ = 25°C
T VJ = 125°C
V GS = ±20 V; V DS = 0 V
V GS = 10 V; V DS = 75 V; I D = I D80
V GS = 10 V; V DS = 0.5 ? V DSS ;
I D = I D80 ; R G = 0.47 ?
1.5
1440
200
680
150
250
400
1
1
mA
mA
μA
nC
nC
nC
ns
ns
ns
Applications
? converters with high power density for
– main and auxiliary AC drives of
electric vehicles
– 4 quadrant DC drives
– power supplies
t f
200
ns
V F
t rr
(diode) I F = 650 A; V GS = 0 V
(diode) I F = 650 A; -di/dt = 500 A/μs; V DS = ? V DSS
1.2
300
1.5
V
ns
R thJC
0.08 K/W
R thJS
with heat transfer paste
0.12
K/W
① additional current limitation by external leads
IXYS reserves the right to change limits, test conditions and dimensions.
? 2004 IXYS All rights reserved
1-2
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相关代理商/技术参数 |
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|---|---|
| VMM85-02F | 功能描述:MOSFET 85 Amps 200V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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