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参数资料
| 型号： | VMM85-02F |
| 厂商： | IXYS |
| 文件页数： | 1/4页 |
| 文件大小： | 0K |
| 描述： | MOSFET MOD PHASE LEG 200V Y4 |
| 标准包装： | 6 |
| 系列： | HiPerFET™ |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 200V |
| 电流 - 连续漏极(Id) @ 25° C： | 84A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 25 毫欧 @ 500mA，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 8mA |
| 闸电荷(Qg) @ Vgs： | 450nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 15000pF @ 25V |
| 功率 - 最大： | 370W |
| 安装类型： | 底座安装 |
| 封装/外壳： | Y4 |
| 供应商设备封装： | Y4 |
| 包装： | 散装 |
Dual Power
HiPerFET TM Module
Phaseleg Configuration
VMM 85-02F
V DSS = 200 V
I D25 = 84 A
R DS(on) = 25 m W
High dv/dt, Low t rr , HDMOS TM Family
3
1
2
3
11
10
9
8
8
9
11
1
10
2
2 = Source 1
8 = Gate 2
10 = Kelvin Source 1
1 = Drain 1, Source 2
3 = Drain 2
9 = Kelvin Source 2
11 = Gate 1
Symbol
Conditions
Maximum Ratings
Features
V DSS
V DGR
V GS
V GSM
I D25
I D80
I DM
P tot
T J = 25°C to 150°C
T J = 25°C to 150°C; R GS = 10 k W
Continuous
Transient
T C = 25°C
T C = 80°C
T C = 25°C, t p = 10 μs, pulse width limited by T JM
T C = 25°C
200
200
± 20
± 30
84
63
335
370
V
V
V
V
A
A
A
W
? Two MOSFET's in phaseleg config.
? International standard package
? Direct copper bonded Al 2 O 3 ceramic
base plate
? Isolation voltage 3600 V~
? Low R DS(on) HDMOS TM process
? Low package inductance for high
speed switching
? Kelvin source contact
T J
T JM
T stg
-40 ... +150
150
-40 ... +125
°C
°C
°C
Applications
? Switched-mode and resonant-mode
V ISOL
50/60 Hz
I ISOL ￡ 1 mA
t = 1 min
t=1s
3000
3600
V~
V~
power supplies
? Uninterruptible power supplies (UPS)
M d
Mounting torque (M5 or 10-32 UNF)
2.25-2.75/20-25 Nm/lb.in.
Terminal connection torque (M5)
2.5-4/22-35 Nm/lb.in.
Advantages
Weight
Typical including screws
130
g
?
?
?
Easy to mount with two screws
Space and weight savings
High power density
Symbol
Conditions
Characteristic Values
?
Low losses
(T J = 25°C, unless otherwise specified)
min. typ. max.
V DSS
V GS = 0 V
200
V
V GS(th)
V DS = V GS , I D = 8 mA
2
4
V
I GSS
I DSS
V GS = ± 20 V DC, V DS = 0
V DS = V DSS , V GS = 0 V, T J = 25°C
V DS = 0.8 ? V DSS , V GS = 0 V, T J = 125°C
500 nA
400 μA
2 mA
R DS(on)
V GS = 10 V, I D = 0.5 ? I D25
Pulse test, t ￡ 300 μs, duty cycle d ￡ 2%
20
25 m W
Data per MOSFET unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
? 2000 IXYS All rights reserved
1-4
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