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参数资料
| 型号： | VI20200C-E3/4W |
| 厂商： | Vishay General Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 155K |
| 描述： | DIODE 20A 200V SCHOTTKY TO262AA |
| 标准包装： | 1,000 |
| 系列： | TMBS® |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 1.6V @ 10A |
| 电流 - 在 Vr 时反向漏电： | 150µA @ 200V |
| 电流 - 平均整流 (Io)（每个二极管）： | 10A |
| 电压 - (Vr)（最大）： | 200V |
| 二极管类型： | 肖特基 |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 二极管配置： | 1 对共阴极 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-262-3，长引线，I²Pak，TO-262AA |
| 供应商设备封装： | TO-262AA |
| 包装： | 管件 |
V20200C, VF20200C, VB20200C & VI20200C
Vishay General Semiconductor
Document Number: 89072
Revision: 24-Jun-09
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
New Product
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF
= 0.60 V at I
F
= 5 A
FEATURES
? Trench MOS Schottky technology
Low forward voltage drop, low power
losses
High efficiency operation
Low thermal resistance
Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB, ITO-220AB and
TO-262AA package)
Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
MECHANICAL DATA
Case:
TO-220AB, ITO-220AB, TO-263AB and
TO-262AA
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
2 x 10 A
VRRM
200 V
IFSM
120 A
VF at IF
= 10 A 0.68 V
TJ
max. 150 °C
TO-220AB
V20200C VF20200C1
32
2
3
1
K
TO-263AB
1
2
K
TO-262AA
PIN 1
PIN 2
K
HEATSINK
PIN 1
PIN 2
CASE
PIN 3
PIN 1
PIN 2
PIN 3
PIN 1
PIN 2
PIN 3
K
VI20200C
VB20200C
TMBS?
ITO-220AB
3
1
2
MAXIMUM RATINGS (TA
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V20200C VF20200C VB20200C VI20200C UNIT
Maximum repetitive peak reverse voltage VRRM
200 V
Maximum average forward rectified current (fig. 1)
per device
per diode
IF(AV)
20
10
A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
IFSM
120 A
Non-repetitive avalanche energy
at TJ
= 25 °C, L = 60 mH per diode
EAS
100 mJ
Peak repetitive reverse current at tp
= 2 μs, 1 kHz,
TJ
= 38 °C ± 2 °C per diode
IRRM
0.5 A
Voltage rate of change (rated VR) dV/dt 10 000 V/μs
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
VAC
1500 V
Operating junction and storage temperature range TJ, TSTG
- 40 to + 150 °C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| VI20200G | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
| VI20200G-E3/4W | 功能描述:肖特基二极管与整流器 20 Amp 200 Volt Dual 110 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| VI20200G-E3-4W | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
| VI-202CU | 制造商:VICOR 制造商全称:Vicor Corporation 功能描述:DC-DC Converters 50 to 200 Watts |
| VI-202-CU-F1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Analog IC |
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