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| 型号： | VN2222LLRLRA |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/4页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 150MA TO-92 |
| 产品变化通告： | Product Discontinuation 20/Aug/2008 |
| 标准包装： | 2,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 150mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 7.5 欧姆 @ 500mA，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 1mA |
| 输入电容 (Ciss) @ Vds： | 60pF @ 25V |
| 功率 - 最大： | 400mW |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-226-3、TO-92-3（TO-226AA）成形引线 |
| 供应商设备封装： | TO-92-3 |
| 包装： | 带卷 (TR) |
VN2222LLG
ELECTRICAL CHARACTERISTICS (T C = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Drain ? Source Breakdown Voltage
(V GS = 0, I D = 100 m Adc)
Zero Gate Voltage Drain Current
(V DS = 48 Vdc, V GS = 0)
(V DS = 48 Vdc, V GS = 0, T J = 125 ° C)
Gate ? Body Leakage Current, Forward
(V GSF = 30 Vdc, V DS = 0)
V (BR)DSS
I DSS
I GSSF
60
?
?
?
?
10
500
? 100
Vdc
m Adc
nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(V DS = V GS , I D = 1.0 mAdc)
Static Drain ? Source On ? Resistance
(V GS = 10 Vdc, I D = 0.5 Adc)
(V GS = 10 Vdc, I D = 0.5 Vdc, T C = 125 ° C)
Drain ? Source On ? Voltage
(V GS = 5.0 Vdc, I D = 200 mAdc)
(V GS = 10 Vdc, I D = 500 mAdc)
On ? State Drain Current
(V GS = 10 Vdc, V DS ≥ 2.0 V DS(on) )
Forward Transconductance
(V DS = 10 Vdc, I D = 500 mAdc)
V GS(th)
r DS(on)
V DS(on)
I D(on)
g fs
0.6
?
?
?
?
750
100
2.5
7.5
13.5
1.5
3.75
?
?
Vdc
W
Vdc
mA
m mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(V DS = 25 Vdc, V GS = 0,
f = 1.0 MHz)
C iss
C oss
C rss
?
?
?
60
25
5.0
pF
SWITCHING CHARACTERISTICS (Note 1)
Turn ? On Delay Time
Turn ? Off Delay Time
(V DD = 15 Vdc, I D = 600 mA,
R gen = 25 W , R L = 23 W )
t on
t off
?
?
10
10
ns
1. Pulse Test: Pulse Width v 300 m s, Duty Cycle v 2.0%.
ORDERING INFORMATION
VN2222LLG
Device
Package
TO ? 92
(Pb ? Free)
Shipping ?
1000 Unit / Box
?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| VN2222LLRLRAG | 功能描述:MOSFET 60V 150mA N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| VN2222LLRLRM | 制造商:ON Semiconductor 功能描述: |
| VN2222LL-TA | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N-CH 60V 0.23A 3-Pin TO-226AA T/R |
| VN2222LLTR1 | 制造商:Vishay Siliconix 功能描述:230 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| VN2222LL-TR1 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N-CH 60V 0.23A 3-Pin TO-226AA T/R |
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