参数资料
型号: VN2222LLRLRA
厂商: ON Semiconductor
文件页数: 2/4页
文件大小: 0K
描述: MOSFET N-CH 60V 150MA TO-92
产品变化通告: Product Discontinuation 20/Aug/2008
标准包装: 2,000
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 150mA
开态Rds(最大)@ Id, Vgs @ 25° C: 7.5 欧姆 @ 500mA,10V
Id 时的 Vgs(th)(最大): 2.5V @ 1mA
输入电容 (Ciss) @ Vds: 60pF @ 25V
功率 - 最大: 400mW
安装类型: 通孔
封装/外壳: TO-226-3、TO-92-3(TO-226AA)成形引线
供应商设备封装: TO-92-3
包装: 带卷 (TR)
VN2222LLG
ELECTRICAL CHARACTERISTICS (T C = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Drain ? Source Breakdown Voltage
(V GS = 0, I D = 100 m Adc)
Zero Gate Voltage Drain Current
(V DS = 48 Vdc, V GS = 0)
(V DS = 48 Vdc, V GS = 0, T J = 125 ° C)
Gate ? Body Leakage Current, Forward
(V GSF = 30 Vdc, V DS = 0)
V (BR)DSS
I DSS
I GSSF
60
?
?
?
?
10
500
? 100
Vdc
m Adc
nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(V DS = V GS , I D = 1.0 mAdc)
Static Drain ? Source On ? Resistance
(V GS = 10 Vdc, I D = 0.5 Adc)
(V GS = 10 Vdc, I D = 0.5 Vdc, T C = 125 ° C)
Drain ? Source On ? Voltage
(V GS = 5.0 Vdc, I D = 200 mAdc)
(V GS = 10 Vdc, I D = 500 mAdc)
On ? State Drain Current
(V GS = 10 Vdc, V DS ≥ 2.0 V DS(on) )
Forward Transconductance
(V DS = 10 Vdc, I D = 500 mAdc)
V GS(th)
r DS(on)
V DS(on)
I D(on)
g fs
0.6
?
?
?
?
750
100
2.5
7.5
13.5
1.5
3.75
?
?
Vdc
W
Vdc
mA
m mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(V DS = 25 Vdc, V GS = 0,
f = 1.0 MHz)
C iss
C oss
C rss
?
?
?
60
25
5.0
pF
SWITCHING CHARACTERISTICS (Note 1)
Turn ? On Delay Time
Turn ? Off Delay Time
(V DD = 15 Vdc, I D = 600 mA,
R gen = 25 W , R L = 23 W )
t on
t off
?
?
10
10
ns
1. Pulse Test: Pulse Width v 300 m s, Duty Cycle v 2.0%.
ORDERING INFORMATION
VN2222LLG
Device
Package
TO ? 92
(Pb ? Free)
Shipping ?
1000 Unit / Box
?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
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