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参数资料
| 型号： | VSKCL240-10S10 |
| 厂商： | VISHAY INTERTECHNOLOGY INC |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 250 A, 1000 V, SILICON, RECTIFIER DIODE |
| 封装： | ROHS COMPLIANT, MAGN-A-PAK-3 |
| 文件页数： | 4/11页 |
| 文件大小： | 264K |
| 代理商： | VSKCL240-10S10 |
www.vishay.com
For technical questions, contact: ind-modules@vishay.com
Document Number: 93164
2
Revision: 22-Apr-08
VSK.L240 Series
Vishay High Power Products
Fast Recovery Diodes, 250 A
(MAGN-A-PAKTM Power Modules)
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
trr
CODE
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
IRRM MAXIMUM
AT 150 °C
mA
VSK.L240
06
S10
600
700
50
10
S10
1000
1100
12
S20
1200
1300
14
S20
1400
1500
20
S30
2000
2100
25
S30
2500
2600
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
VSK.L240
UNITS
S10/S20
S30
Maximum average forward current
at case temperature
IF(AV)
180° conduction, half sine wave
250
240
A
100
°C
Maximum RMS forward current
IF(RMS)
As AC switch
392
377
A
Maximum peak, one-cycle forward
non-repetitive, surge current
IFSM
t = 10 ms
No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
8000
7500
t = 8.3 ms
8400
7850
t = 10 ms
100 % VRRM
reapplied
6750
6300
t = 8.3 ms
7100
6600
Maximum I2t for fusing
I2t
t = 10 ms
No voltage
reapplied
322
280
kA2s
t = 8.3 ms
294
256
t = 10 ms
100 % VRRM
reapplied
228
198
t = 8.3 ms
208
181
Maximum I2
√t for fusing
I2
√t
t = 0.1 to 10 ms, no voltage reapplied
3220
2800
kA2
√s
Low level value of threshold voltage
VF(TO)1
(16.7 % x
π x I
F(AV) < I < π x IF(AV)),
TJ = TJ maximum
0.98
V
High level value of threshold voltage
VF(TO)2
(I >
π x I
F(AV)), TJ = TJ maximum
1.31
Low level value of forward slope resistance
rf1
(16.7 % x
π x I
F(AV) < I < π x IF(AV)),
TJ = TJ maximum
0.75
0.97
m
Ω
High level value of forward slope resistance
rf2
(I >
π x I
F(AV)), TJ = TJ maximum
0.41
0.60
Maximum forward voltage drop
VFM
IFM = 800 A, TJ = 150 °C, tp = 10 ms
Average power = VF(TO) x IF(AV) + rf x (IF(RMS))2
1.57
1.75
V
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