参数资料
型号: VSKCL240-10S10
厂商: VISHAY INTERTECHNOLOGY INC
元件分类: 参考电压二极管
英文描述: 250 A, 1000 V, SILICON, RECTIFIER DIODE
封装: ROHS COMPLIANT, MAGN-A-PAK-3
文件页数: 5/11页
文件大小: 264K
代理商: VSKCL240-10S10
Document Number: 93164
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
Revision: 22-Apr-08
3
VSK.L240 Series
Fast Recovery Diodes, 250 A
(MAGN-A-PAKTM Power Modules)
Vishay High Power Products
Note
The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
RECOVERY CHARACTERISTICS
CODE
MAXIMUM VALUE
AT TJ = 25 °C
TEST CONDITIONS
TYPICAL VALUES
AT TJ = 150 °C
trr AT 25 % IRRM
(s)
Ipk
SQUARE
PULSE
(A)
dI/dt
(A/s)
Vr
(V)
trr AT 25 % IRRM
(s)
Qrr
(C)
Ir
(A)
S10
1.0
500
100
- 50
2.7
135
100
S20
2.0
3.5
250
145
S30
3.0
3.6
360
200
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum peak reverse leakage current
IRRM
TJ = 150 °C, leakage current
50
mA
RMS insulation voltage
VINS
50 Hz, circuit to base, all terminals shorted, 25 °C,
t = 1 s
3000
V
I
FM
t
rr
di
dt
I
RM(REC)
Q
rr
t
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction operating and
storage temperature range
TJ, TStg
- 40 to 150
°C
Maximum internal thermal resistance,
junction to case per junction
RthJC
DC operation
0.125
K/W
Thermal resistance,
case to heatsink per module
RthCS
Mounting surface flat, smooth and greased
0.02
Mounting torque ± 10 %
MAP to heatsink
A mounting compound is recommended and
the torque should be rechecked after a
period of about 3 hours to allow for the
spread of the compound.
4 to 6
Nm
busbar to MAP
8 to 10
Approximate weight
850
g
30
oz.
Case style
MAGN-A-PAK
ΔR CONDUCTION PER JUNCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
TEST CONDITIONS
UNITS
180°
0.008
0.007
TJ = TJ maximum
K/W
120°
0.010
0.011
90°
0.013
0.015
60°
0.019
0.020
30°
0.032
0.033
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