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参数资料
| 型号： | VSKT105/14 |
| 厂商： | VISHAY INTERTECHNOLOGY INC |
| 元件分类： | 晶闸管 |
| 英文描述： | 164.85 A, 1400 V, SCR, TO-240AA |
| 封装： | ROHS COMPLIANT, TO-240AA COMPATIBLE, ADD-A-PAK-7 |
| 文件页数： | 2/8页 |
| 文件大小： | 411K |
| 代理商： | VSKT105/14 |
www.vishay.com
For technical questions, contact: indmodules@vishay.com
Document Number: 94628
2
Revision: 05-Aug-09
VSK.105.. Series
Vishay High Power Products
ADD-A-PAK Generation VII Power Modules
Thyristor/Diode and Thyristor/Thyristor, 105 A
ELECTRICAL SPECIFICATIONS
Notes
(1) I2t for time tx = I2√t x √tx
(2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2
(3) 16.7 % x
π x I
AV < I < π x IAV
(4) I >
π x I
AV
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
VRRM, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
VDRM, MAXIMUM REPETITIVE
PEAK OFF-STATE VOLTAGE,
GATE OPEN CIRCUIT
V
IRRM,
IDRM
AT 130 °C
mA
VSK.105
04
400
500
400
20
06
600
700
600
08
800
900
800
10
1000
1100
1000
12
1200
1300
1200
14
1400
1500
1400
16
1600
1700
1600
ON-STATE CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average on-state current (thyristors)
IT(AV)
180° conduction, half sine wave,
TC = 85 °C
105
A
Maximum average forward current (diodes)
IF(AV)
Maximum continuous RMS on-state current,
as AC switch
IO(RMS)
235
Maximum peak, one-cycle non-repetitive
on-state or forward current
ITSM
or
IFSM
t = 10 ms
No voltage
reapplied
Sinusoidal
half wave,
initial TJ = TJ maximum
2000
t = 8.3 ms
2094
t = 10 ms
100 % VRRM
reapplied
1682
t = 8.3 ms
1760
Maximum I2t for fusing
I2t
t = 10 ms
No voltage
reapplied
Initial TJ = TJ maximum
20
kA2s
t = 8.3 ms
18.26
t = 10 ms
100 % VRRM
reapplied
14.14
t = 8.3 ms
12.91
Maximum I2
√t for fusing
I2
√t (1)
t = 0.1 ms to 10 ms, no voltage reapplied
TJ = TJ maximum
200
kA2
√s
Maximum value or threshold voltage
VT(TO) (2)
Low level (3)
TJ = TJ maximum
0.98
V
High level (4)
1.12
Maximum value of on-state
slope resistance
rt (2)
Low level (3)
TJ = TJ maximum
2.7
m
Ω
High level (4)
2.34
Maximum peak on-state or forward voltage
VTM
ITM = π x IT(AV)
TJ = 25 °C
1.8
V
VFM
IFM = π x IF(AV)
Maximum non-repetitive rate of rise of
turned on current
dI/dt
TJ = 25 °C, from 0.67 VDRM,
ITM = π x IT(AV), Ig = 500 mA, tr < 0.5 s, tp > 6 s
150
A/s
Maximum holding current
IH
TJ = 25 °C, anode supply = 6 V,
resistive load, gate open circuit
250
mA
Maximum latching current
IL
TJ = 25 °C, anode supply = 6 V, resistive load
400
or
I
(RMS)
I
(RMS)
相关PDF资料 |
PDF描述 |
|---|---|
| VSKT105/16 | 164.85 A, 1600 V, SCR, TO-240AA |
| VSKL105/04 | 164.85 A, 400 V, SCR, TO-240AA |
| VSKL105/06 | 164.85 A, 600 V, SCR, TO-240AA |
| VSKL105/08 | 164.85 A, 800 V, SCR, TO-240AA |
| VSKL105/10 | 164.85 A, 1000 V, SCR, TO-240AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| VSKT105-16 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:ADD-A-PAK Generation VII Power Modules Thyristor/Diode and Thyristor/Thyristor, 105 A |
| VSKT10516P | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Thyristor/Diode and Thyristor/Thyristor (ADD-A-PAKTM Generation 5 Power Modules), 105 A |
| VSKT10516S90P | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Thyristor/Diode and Thyristor/Thyristor (ADD-A-PAKTM Generation 5 Power Modules), 105 A |
| VSKT106/12P | 功能描述:SCR模块 1200 Volt 105 Amp RoHS:否 制造商:Vishay Semiconductors 开启状态 RMS 电流 (It RMS):260 A 不重复通态电流:4000 A 最大转折电流 IBO:4200 A 额定重复关闭状态电压 VDRM:1.6 kV 关闭状态漏泄电流（在 VDRM IDRM 下）:20 mA 开启状态电压:1.43 V 保持电流（Ih 最大值）: 栅触发电压 (Vgt): 栅触发电流 (Igt): 最大工作温度:+ 150 C 安装风格:Chassis 封装 / 箱体:INT-A-PAK |
| VSKT106/14P | 功能描述:SCR模块 1400 Volt 105 Amp RoHS:否 制造商:Vishay Semiconductors 开启状态 RMS 电流 (It RMS):260 A 不重复通态电流:4000 A 最大转折电流 IBO:4200 A 额定重复关闭状态电压 VDRM:1.6 kV 关闭状态漏泄电流（在 VDRM IDRM 下）:20 mA 开启状态电压:1.43 V 保持电流（Ih 最大值）: 栅触发电压 (Vgt): 栅触发电流 (Igt): 最大工作温度:+ 150 C 安装风格:Chassis 封装 / 箱体:INT-A-PAK |
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