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参数资料
| 型号： | VSKT105/14 |
| 厂商： | VISHAY INTERTECHNOLOGY INC |
| 元件分类： | 晶闸管 |
| 英文描述： | 164.85 A, 1400 V, SCR, TO-240AA |
| 封装： | ROHS COMPLIANT, TO-240AA COMPATIBLE, ADD-A-PAK-7 |
| 文件页数： | 3/8页 |
| 文件大小： | 411K |
| 代理商： | VSKT105/14 |
Document Number: 94628
For technical questions, contact: indmodules@vishay.com
www.vishay.com
Revision: 05-Aug-09
3
VSK.105.. Series
ADD-A-PAK Generation VII Power Modules
Thyristor/Diode and Thyristor/Thyristor, 105 A
Vishay High Power Products
Note
Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
TRIGGERING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum peak gate power
PGM
12
W
Maximum average gate power
PG(AV)
3
Maximum peak gate current
IGM
3A
Maximum peak negative gate voltage
- VGM
10
V
Maximum gate voltage required to trigger
VGT
TJ = - 40 °C
Anode supply = 6 V
resistive load
4.0
TJ = 25 °C
2.5
TJ = 125 °C
1.7
Maximum gate current required to trigger
IGT
TJ = - 40 °C
Anode supply = 6 V
resistive load
270
mA
TJ = 25 °C
150
TJ = 125 °C
80
Maximum gate voltage that will not trigger
VGD
TJ = 125 °C, rated VDRM applied
0.25
V
Maximum gate current that will not trigger
IGD
TJ = 125 °C, rated VDRM applied
6
mA
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum peak reverse and off-state
leakage current at VRRM, VDRM
IRRM,
IDRM
TJ = 130 °C, gate open circuit
20
mA
Maximum RMS insulation voltage
VINS
50 Hz
3000 (1 min)
3600 (1 s)
V
Maximum critical rate of rise of off-state voltage
dV/dt
TJ = 130 °C, linear to 0.67 VDRM
1000
V/s
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Junction operating temperature range
TJ
- 40 to 130
°C
Storage temperature range
TStg
Maximum internal thermal resistance,
junction to case per leg
RthJC
DC operation
0.22
°C/W
Typical thermal resistance,
case to heatsink per module
RthCS
Mounting surface flat, smooth and greased
0.1
Mounting torque ± 10 %
to heatsink
A mounting compound is recommended and the
torque should be rechecked after a period of
3 h to allow for the spread of the compound.
4
Nm
busbar
3
Approximate weight
75
g
2.7
oz.
Case style
JEDEC
TO-240AA compatible
ΔR CONDUCTION PER JUNCTION
DEVICES
SINE HALF WAVE CONDUCTION
RECTANGULAR WAVE CONDUCTION
UNITS
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
VSK.105..
0.04
0.048
0.063
0.085
0.125
0.033
0.052
0.067
0.088
0.127
°C/W
相关PDF资料 |
PDF描述 |
|---|---|
| VSKT105/16 | 164.85 A, 1600 V, SCR, TO-240AA |
| VSKL105/04 | 164.85 A, 400 V, SCR, TO-240AA |
| VSKL105/06 | 164.85 A, 600 V, SCR, TO-240AA |
| VSKL105/08 | 164.85 A, 800 V, SCR, TO-240AA |
| VSKL105/10 | 164.85 A, 1000 V, SCR, TO-240AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| VSKT105-16 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:ADD-A-PAK Generation VII Power Modules Thyristor/Diode and Thyristor/Thyristor, 105 A |
| VSKT10516P | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Thyristor/Diode and Thyristor/Thyristor (ADD-A-PAKTM Generation 5 Power Modules), 105 A |
| VSKT10516S90P | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Thyristor/Diode and Thyristor/Thyristor (ADD-A-PAKTM Generation 5 Power Modules), 105 A |
| VSKT106/12P | 功能描述:SCR模块 1200 Volt 105 Amp RoHS:否 制造商:Vishay Semiconductors 开启状态 RMS 电流 (It RMS):260 A 不重复通态电流:4000 A 最大转折电流 IBO:4200 A 额定重复关闭状态电压 VDRM:1.6 kV 关闭状态漏泄电流（在 VDRM IDRM 下）:20 mA 开启状态电压:1.43 V 保持电流（Ih 最大值）: 栅触发电压 (Vgt): 栅触发电流 (Igt): 最大工作温度:+ 150 C 安装风格:Chassis 封装 / 箱体:INT-A-PAK |
| VSKT106/14P | 功能描述:SCR模块 1400 Volt 105 Amp RoHS:否 制造商:Vishay Semiconductors 开启状态 RMS 电流 (It RMS):260 A 不重复通态电流:4000 A 最大转折电流 IBO:4200 A 额定重复关闭状态电压 VDRM:1.6 kV 关闭状态漏泄电流（在 VDRM IDRM 下）:20 mA 开启状态电压:1.43 V 保持电流（Ih 最大值）: 栅触发电压 (Vgt): 栅触发电流 (Igt): 最大工作温度:+ 150 C 安装风格:Chassis 封装 / 箱体:INT-A-PAK |
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