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| 型号： | VSLY5850 |
| 厂商： | Vishay Semiconductors |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | IR EMITTER 850NM HIGH SPEED DIP |
| 产品培训模块： | A850 Series Infrared Surface Emitters |
| 标准包装： | 4,000 |
| 电流 - DC 正向(If)： | 100mA |
| 辐射强度(le)最小值@正向电流： | 300mW/sr @ 100mA |
| 波长： | 850nm |
| 正向电压： | 1.65V |
| 视角： | 6° |
| 方向： | 顶视图 |
| 安装类型： | 通孔 |
| 封装/外壳： | T 1 3/4 |
| 包装： | 散装 |
VSLY5850
200
180
160
140
www.vishay.com
120
100
80
Vishay Semiconductors
120
100
80
60
40
20
0
R thJA = 230 K/W
60
40
20
0
R thJA = 230 K/W
0
10
20
30
40
50
60
70 80
90 100
0
10
20 30 40
50 60 70 80
90 100
22116
T amb - Ambient Temperature (°C)
22115
T amb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (T amb = 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Temperature coefficient of V F
TEST CONDITION
I F = 100 mA, t p = 20 ms
I F = 1 A, t p = 100 μs
I F = 1 mA
I F = 10 mA
SYMBOL
V F
V F
TK VF
TK VF
MIN.
TYP.
1.65
2.9
- 1.45
- 1.25
MAX.
1.9
UNIT
V
V
mV/K
mV/K
Reverse current
I R
not designed for reverse operation
μA
Junction capacitance
V R = 0 V, f = 1 MHz, E = 0
C j
125
pF
Radiant intensity
Radiant power
Temperature coefficient of φ e
I F = 100 mA, t p = 20 ms
I F = 1 A, t p = 100 μs
I F = 100 mA, t p = 20 ms
I F = 100 mA
I e
I e
φ e
TK φ e
300
600
5100
55
- 0.35
900
mW/sr
mW/sr
mW
%/K
Angle of half intensity
?
±3
deg
Peak wavelength
Spectral bandwidth
Temperature coefficient of λ p
Rise time
Fall time
I F = 100 mA
I F = 100 mA
I F = 100 mA
I F = 100 mA
I F = 100 mA
λ p
Δλ
TK λ p
t r
t f
840
850
30
0.25
10
10
870
nm
nm
nm/K
ns
ns
Rev. 1.1, 28-Mar-13
2
Document Number: 83160
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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