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参数资料
| 型号： | VSLY5850 |
| 厂商： | Vishay Semiconductors |
| 文件页数： | 3/5页 |
| 文件大小： | 0K |
| 描述： | IR EMITTER 850NM HIGH SPEED DIP |
| 产品培训模块： | A850 Series Infrared Surface Emitters |
| 标准包装： | 4,000 |
| 电流 - DC 正向(If)： | 100mA |
| 辐射强度(le)最小值@正向电流： | 300mW/sr @ 100mA |
| 波长： | 850nm |
| 正向电压： | 1.65V |
| 视角： | 6° |
| 方向： | 顶视图 |
| 安装类型： | 通孔 |
| 封装/外壳： | T 1 3/4 |
| 包装： | 散装 |
VSLY5850
www.vishay.com
BASIC CHARACTERISTICS (T amb = 25 °C, unless otherwise specified)
Vishay Semiconductors
1000
t p /T = 0.01
T amb < 50 °C
1000
0.02
100
0.05
0.2
0.5
0.1
100
10
1
0.1
0.01
0.1
1
10
100
1
10 100
1000
16031
t p - Pulse Duration (ms)
16971
I F - Forward Current (mA)
Fig. 3 - Pulse Forward Current vs. Pulse Duration
10
t p = 100 μs
1
0.1
0.01
Fig. 6 - Radiant Power vs. Forward Current
1
I F = 30 mA
0.75
0.5
0.25
0.001
0
0.5
1
1.5
2
2.5
3
3.5
0
650
750
850
950
22097
V F - Forward Voltage (V)
21776-1
λ - Wavelength (nm)
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 7 - Relative Radiant Power vs. Wavelength
10 000
0°
10°
20°
30°
1000
40°
100
1.0
0.9
50°
10
t P = 100 μs
0.8
60°
70°
1
0.001
0.01
0.1
1
0.7
80°
22117
I F - Forward Current (A)
22132
0.6
0.4
0.2
0
Fig. 5 - Radiant Intensity vs. Forward Current
Fig. 8 - Relative Radiant Intensity vs. Angular Displacement
Rev. 1.1, 28-Mar-13
3
Document Number: 83160
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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