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参数资料
| 型号： | W24L11Q-55LL |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | SRAM |
| 英文描述： | 128K X 8 STANDARD SRAM, 55 ns, PDSO32 |
| 封装： | 8 X 13.40 MM, TSOP1-32 |
| 文件页数： | 5/12页 |
| 文件大小： | 247K |
| 代理商： | W24L11Q-55LL |
W24L11
- 2 -
TRUTH TABLE
#CS1
CS2
#OE
#WE
MODE
I/O1
I/O8
VDD CURRENT
H
X
Not Selected
High Z
ISB, ISB1
X
L
X
Not Selected
High Z
ISB, ISB1
L
H
Output Disable
High Z
IDD
L
H
L
H
Read
Data Out
IDD
L
H
X
L
Write
Data In
IDD
DC CHARACTERISTICS
Absolute Maximum Ratings
RATING
PARAMETER
3.3V
5V
UNIT
Supply Voltage to VSS Potential
-0.5 to +4.6
-0.5 to +7.0
V
Input/Output to VSS Potential
-0.5 to VDD +0.5
V
Allowable Power Dissipation
1.0
W
Storage Temperature
-65 to +150
°C
Operating Temperature
L/LL
0 to 70
°C
LE
-20 to 85
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability
of the device.
Operating Characteristics
(VDD = 5V
±10%; VDD = 3.3V ±5%; VSS = 0V; TA (°C) = 0 to 70 for LL, -20 to 85 for LE)
PARAMETER
SYM.
TEST CONDITIONS
MIN.
MAX.
UNIT
3.3V
-0.5
+0.6
Input Low Voltage
VIL
-
5V
-0.5
+0.8
V
Input High Voltage
VIH
-
+2.0
VDD +0.5
V
Input Leakage Current
ILI
VIN = VSS to VDD
-1
+1
A
Output Leakage Current
ILO
VI/O = VSS to VDD,
#CS1 = VIH (min.) or
CS2 = VIL (max.) or
#OE = VIH (min.) or
#WE = VIL (max.)
-1
+1
A
Output Low Voltage
VOL
IOL = +2.1 mA
-
0.4
V
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W24L11Q-70L | 制造商:WINBOND 制造商全称:Winbond 功能描述:128K X 8 High Speed CMOS Static RAM |
| W24L11Q-70LE | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 SRAM |
| W24L11Q-70LL | 制造商:WINBOND 制造商全称:Winbond 功能描述:128K X 8 High Speed CMOS Static RAM |
| W24L11S-70L | 制造商:WINBOND 制造商全称:Winbond 功能描述:128K X 8 High Speed CMOS Static RAM |
| W24L11S-70LE | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 SRAM |
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