- 您现在的位置：买卖IC网 > PDF目录68427 > W25Q16CVSSIG (WINBOND ELECTRONICS CORP) 16M X 1 SPI BUS SERIAL EEPROM, PDSO8 PDF资料下载
参数资料
| 型号： | W25Q16CVSSIG |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | PROM |
| 英文描述： | 16M X 1 SPI BUS SERIAL EEPROM, PDSO8 |
| 封装： | 0.208 INCH, GREEN, SOIC-8 |
| 文件页数： | 44/79页 |
| 文件大小： | 1131K |
| 代理商： | W25Q16CVSSIG |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页当前第44页第45页第46页第47页第48页第49页第50页第51页第52页第53页第54页第55页第56页第57页第58页第59页第60页第61页第62页第63页第64页第65页第66页第67页第68页第69页第70页第71页第72页第73页第74页第75页第76页第77页第78页第79页
W25Q16CV
Publication Release Date: April 01, 2011
- 49 -
Revision C
7.2.29 Power-down (B9h)
Although the standby current during normal operation is relatively low, standby current can be further
reduced with the Power-down instruction. The lower power consumption makes the Power-down
instruction especially useful for battery powered applications (See ICC1 and ICC2 in AC Characteristics).
The instruction is initiated by driving the /CS pin low and shifting the instruction code “B9h” as shown in
Figure 27.
The /CS pin must be driven high after the eighth bit has been latched. If this is not done the Power-down
instruction will not be executed. After /CS is driven high, the power-down state will entered within the time
duration of tDP (See AC Characteristics). While in the power-down state only the Release from Power-
down / Device ID instruction, which restores the device to normal operation, will be recognized. All other
instructions are ignored. This includes the Read Status Register instruction, which is always available
during normal operation. Ignoring all but one instruction makes the Power Down state a useful condition
for securing maximum write protection. The device always powers-up in the normal operation with the
standby current of ICC1.
/CS
CLK
DI
(IO
0)
Mode 0
Mode 3
0
1
2
3
4
5
6
7
Instruction (B9h)
Mode 0
Mode 3
tDP
Power-down current
Stand-by current
Figure 27. Deep Power-down Instruction Sequence Diagram
相关PDF资料 |
PDF描述 |
|---|---|
| W25Q16DWZPIP | 16M X 1 SPI BUS SERIAL EEPROM, PDSO8 |
| W25Q20BWUXIP | 2M X 1 SPI BUS SERIAL EEPROM, PDSO8 |
| W25Q32BVSSAG | 32M X 1 SPI BUS SERIAL EEPROM, PDSO8 |
| W25Q32BVSSAP | 32M X 1 SPI BUS SERIAL EEPROM, PDSO8 |
| W25Q32BWSNIP | 4M X 8 SPI BUS SERIAL EEPROM, DSO8 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W25Q16CVSSIG TR | 制造商:Winbond Electronics Corp 功能描述:SPIFLASH, 16M-BIT, 4KB UNIFORM |
| W25Q16CVSSIP | 制造商:WINBOND 制造商全称:Winbond 功能描述:3V 16M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
| W25Q16CVTCAG | 制造商:WINBOND 制造商全称:Winbond 功能描述:3V 16M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
| W25Q16CVTCAP | 制造商:WINBOND 制造商全称:Winbond 功能描述:3V 16M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
| W25Q16CVTCIG | 制造商:WINBOND 制造商全称:Winbond 功能描述:3V 16M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
发布紧急采购，3分钟左右您将得到回复。