参数资料
型号: W25Q16DWSFIG
厂商: Winbond Electronics
文件页数: 52/85页
文件大小: 0K
描述: IC FLASH SPI 16MBIT 16SOIC
标准包装: 44
系列: SpiFlash®
格式 - 存储器: 闪存
存储器类型: FLASH
存储容量: 16M(2M x 8)
速度: 104MHz
接口: SPI 串行
电源电压: 1.65 V ~ 1.95 V
工作温度: -40°C ~ 85°C
封装/外壳: 16-SOIC(0.295",7.50mm 宽)
供应商设备封装: 16-SOIC
包装: 管件
W25Q16DW
7.2.27
Erase / Program Resume (7Ah)
The Erase/Program Resume instruction “7Ah” must be written to resume the Sector or Block Erase
operation or the Page Program operation after an Erase/Program Suspend. The Resume instruction “7Ah”
will be accepted by the device only if the SUS bit in the Status Register equals to 1 and the BUSY bit
equals to 0. After issued the SUS bit will be cleared from 1 to 0 immediately, the BUSY bit will be set from
0 to 1 within 200ns and the Sector or Block will complete the erase operation or the page will complete the
program operation. If the SUS bit equals to 0 or the BUSY bit equals to 1, the Resume instruction “7Ah”
will be ignored by the device. The Erase/Program Resume instruction sequence is shown in Figure 26a &
26b.
Resume instruction is ignored if the previous Erase/Program Suspend operation was interrupted by
unexpected power off. It is also required that a subsequent Erase/Program Suspend instruction not to be
issued within a minimum of time of “t SUS ” following a previous Resume instruction.
/CS
Mode 3
0
1
2
3
4
5
6
7
Mode 3
CLK
Mode 0
Mode 0
Instruction (7Ah)
DI
(IO 0 )
Resume previously
suspended Program or
Erase
Figure 26a. Erase/Program Resume Instruction (SPI Mode)
/CS
CLK
Mode 3
Mode 0
0
1
Mode 3
Mode 0
In structio n
7Ah
IO 0
IO 1
IO 2
IO 3
Resume previously
suspended Program or
Erase
Figure 26b. Erase/Program Resume Instruction (QPI Mode)
- 52 -
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