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| 型号： | W25Q40BVSSIG |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | PROM |
| 英文描述： | 4M X 1 FLASH 2.7V PROM, PDSO8 |
| 封装： | 0.208 INCH, GREEN, PLASTIC, SOIC-8 |
| 文件页数： | 36/73页 |
| 文件大小： | 2222K |
| 代理商： | W25Q40BVSSIG |
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W25Q40BV
Publication Release Date: July 08, 2010
- 41 -
Preliminary - Revision B
8.2.24 32KB Block Erase (52h)
The Block Erase instruction sets all memory within a specified block (32K-bytes) to the erased state of all
1s (FFh). A Write Enable instruction must be executed before the device will accept the Block Erase
Instruction (Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low
and shifting the instruction code “52h” followed a 24-bit block address (A23-A0) (see Figure 2). The Block
Erase instruction sequence is shown in figure 22.
The /CS pin must be driven high after the eighth bit of the last byte has been latched. If this is not done
the Block Erase instruction will not be executed. After /CS is driven high, the self-timed Block Erase
instruction will commence for a time duration of tBE1 (See AC Characteristics). While the Block Erase
cycle is in progress, the Read Status Register instruction may still be accessed for checking the status of
the BUSY bit. The BUSY bit is a 1 during the Block Erase cycle and becomes a 0 when the cycle is
finished and the device is ready to accept other instructions again. After the Block Erase cycle has
finished the Write Enable Latch (WEL) bit in the Status Register is cleared to 0. The Block Erase
instruction will not be executed if the addressed page is protected by the Block Protect (CMP, SEC, TB,
BP2, BP1, and BP0) bits (see Status Register Memory Protection table).
Figure 22. 32KB Block Erase Instruction Sequence Diagram
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相关代理商/技术参数 |
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| W25Q40BVSSIP | 制造商:WINBOND 制造商全称:Winbond 功能描述:4M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
| W25Q40BVZPIG | 制造商:WINBOND 制造商全称:Winbond 功能描述:4M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
| W25Q40BVZPIP | 制造商:WINBOND 制造商全称:Winbond 功能描述:4M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
| W25Q40BW | 制造商:WINBOND 制造商全称:Winbond 功能描述:1.8V 4M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
| W25Q40BWSNIG | 功能描述:IC FLASH SPI 4MBIT 8SOIC RoHS:是 类别:集成电路 (IC) >> 存储器 系列:SpiFlash® 标准包装:2,500 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?（单线） 电源电压:1.8 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-TSSOP，8-MSOP（0.118"，3.00mm 宽） 供应商设备封装:8-MSOP 包装:带卷 (TR) |
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