参数资料
型号: W25Q64CVSSAG
厂商: WINBOND ELECTRONICS CORP
元件分类: PROM
英文描述: 64M X 1 SPI BUS SERIAL EEPROM, PDSO8
封装: 0.208 INCH, GREEN, SOIC-8
文件页数: 16/79页
文件大小: 1086K
代理商: W25Q64CVSSAG
W25Q64CV
Publication Release Date: April 01, 2011
- 23 -
Revision C
(IO
0)
DO
(IO
1)
7.2.5
Write Enable (06h)
The Write Enable instruction (Figure 4) sets the Write Enable Latch (WEL) bit in the Status Register to a
1. The WEL bit must be set prior to every Page Program, Quad Page Program, Sector Erase, Block
Erase, Chip Erase, Write Status Register and Erase/Program Security Registers instruction. The Write
Enable instruction is entered by driving /CS low, shifting the instruction code “06h” into the Data Input (DI)
pin on the rising edge of CLK, and then driving /CS high.
/CS
CLK
DI
Mode 0
Mode 3
0
1
2
3
4
5
6
7
Mode 0
Mode 3
Instruction (06h)
High Impedance
Figure 4. Write Enable Instruction Sequence Diagram
7.2.6 Write Enable for Volatile Status Register (50h)
The non-volatile Status Register bits described in section 7.1 can also be written to as volatile bits. This
gives more flexibility to change the system configuration and memory protection schemes quickly without
waiting for the typical non-volatile bit write cycles or affecting the endurance of the Status Register non-
volatile bits. To write the volatile values into the Status Register bits, the Write Enable for Volatile Status
Register (50h) instruction must be issued prior to a Write Status Register (01h) instruction. Write Enable
for Volatile Status Register instruction (Figure 5) will not set the Write Enable Latch (WEL) bit, it is only
valid for the Write Status Register instruction to change the volatile Status Register bit values.
/CS
CLK
DI
(IO
0)
DO
(IO
1)
Mode 0
Mode 3
0
1
2
3
4
5
6
7
Mode 0
Mode 3
Instruction (50h)
High Impedance
Figure 5. Write Enable for Volatile Status Register Instruction Sequence Diagram
相关PDF资料
PDF描述
WS32K32-100HC 128K X 8 MULTI DEVICE SRAM MODULE, 100 ns, CHIP66
WS128K32-25G4CE 512K X 8 MULTI DEVICE SRAM MODULE, 25 ns, CQFP68
WMS128K8L-35DEQE 128K X 8 STANDARD SRAM, 35 ns, CDSO32
WMF512K8X-120CLQ5 512K X 8 FLASH 5V PROM, 120 ns, CQCC32
WF4M16-150DTI5 4M X 16 FLASH 5V PROM MODULE, 150 ns, CDSO56
相关代理商/技术参数
参数描述
W25Q64CVSSAP 制造商:WINBOND 制造商全称:Winbond 功能描述:3V 64M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
W25Q64CVSSIG 功能描述:IC SPI FLASH 64MBIT 8-SOIC RoHS:是 类别:集成电路 (IC) >> 存储器 系列:SpiFlash® 标准包装:1,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (512 x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:2.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.173",4.40mm 宽) 供应商设备封装:8-MFP 包装:带卷 (TR)
W25Q64CVSSIP 制造商:WINBOND 制造商全称:Winbond 功能描述:3V 64M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
W25Q64CVTCAG 制造商:WINBOND 制造商全称:Winbond 功能描述:3V 64M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
W25Q64CVTCAP 制造商:WINBOND 制造商全称:Winbond 功能描述:3V 64M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI