- 您现在的位置：买卖IC网 > PDF目录276881 > W25Q64CVZPIG (WINBOND ELECTRONICS CORP) 64M X 1 SPI BUS SERIAL EEPROM, PDSO8 PDF资料下载
参数资料
| 型号： | W25Q64CVZPIG |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | PROM |
| 英文描述： | 64M X 1 SPI BUS SERIAL EEPROM, PDSO8 |
| 封装： | 6 X 5 MM, GREEN, WSON-8 |
| 文件页数： | 46/79页 |
| 文件大小： | 1086K |
| 代理商： | W25Q64CVZPIG |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页当前第46页第47页第48页第49页第50页第51页第52页第53页第54页第55页第56页第57页第58页第59页第60页第61页第62页第63页第64页第65页第66页第67页第68页第69页第70页第71页第72页第73页第74页第75页第76页第77页第78页第79页
W25Q64CV
- 50 -
7.2.30 Release Power-down / Device ID (ABh)
The Release from Power-down / Device ID instruction is a multi-purpose instruction. It can be used to
release the device from the power-down state, or obtain the devices electronic identification (ID) number.
To release the device from the power-down state, the instruction is issued by driving the /CS pin low,
shifting the instruction code “ABh” and driving /CS high as shown in Figure 28a. Release from power-down
will take the time duration of tRES1 (See AC Characteristics) before the device will resume normal
operation and other instructions are accepted. The /CS pin must remain high during the tRES1 time
duration.
When used only to obtain the Device ID while not in the power-down state, the instruction is initiated by
driving the /CS pin low and shifting the instruction code “ABh” followed by 3-dummy bytes. The Device ID
bits are then shifted out on the falling edge of CLK with most significant bit (MSB) first as shown in Figure
28a. The Device ID values for the W25Q64CV is listed in Manufacturer and Device Identification table.
The Device ID can be read continuously. The instruction is completed by driving /CS high.
When used to release the device from the power-down state and obtain the Device ID, the instruction is
the same as previously described, and shown in Figure 28b, except that after /CS is driven high it must
remain high for a time duration of tRES2 (See AC Characteristics). After this time duration the device will
resume normal operation and other instructions will be accepted. If the Release from Power-down /
Device ID instruction is issued while an Erase, Program or Write cycle is in process (when BUSY equals
1) the instruction is ignored and will not have any effects on the current cycle.
/CS
CLK
DI
(IO
0)
Mode 0
Mode 3
0
1
2
3
4
5
6
7
Instruction (ABh)
Mode 0
Mode 3
tRES1
Power-down current
Stand-by current
Figure 28a. Release Power-down Instruction Sequence
相关PDF资料 |
PDF描述 |
|---|---|
| WS-128K32-70G4I | 512K X 8 MULTI DEVICE SRAM MODULE, 70 ns, CQFP68 |
| WF128K32A-200HSI | 512K X 8 FLASH 12V PROM MODULE, 200 ns, CHIP66 |
| WF512K32-150HSC5 | 512K X 32 FLASH 5V PROM MODULE, 150 ns, CHIP66 |
| WF512K32-150HSI5 | 512K X 32 FLASH 5V PROM MODULE, 150 ns, CHIP66 |
| WS32K32-100HSC | 128K X 8 MULTI DEVICE SRAM MODULE, 100 ns, CHIP66 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W25Q64CVZPIP | 制造商:WINBOND 制造商全称:Winbond 功能描述:3V 64M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
| W25Q64DW | 制造商:WINBOND 制造商全称:Winbond 功能描述:1.8V 64M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI |
| W25Q64DWSFIG | 功能描述:IC FLASH SPI 64MBIT 16SOIC RoHS:是 类别:集成电路 (IC) >> 存储器 系列:SpiFlash® 标准包装:2,500 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?（单线） 电源电压:1.8 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-TSSOP，8-MSOP（0.118"，3.00mm 宽） 供应商设备封装:8-MSOP 包装:带卷 (TR) |
| W25Q64DWSFIP | 制造商:WINBOND 制造商全称:Winbond 功能描述:1.8V 64M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI |
| W25Q64DWSSIG | 功能描述:IC FLASH SPI 64MBIT 8SOIC RoHS:是 类别:集成电路 (IC) >> 存储器 系列:SpiFlash® 标准包装:2,500 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?（单线） 电源电压:1.8 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-TSSOP，8-MSOP（0.118"，3.00mm 宽） 供应商设备封装:8-MSOP 包装:带卷 (TR) |
发布紧急采购，3分钟左右您将得到回复。