参数资料
型号: W26B021T70LL
厂商: WINBOND ELECTRONICS CORP
元件分类: SRAM
英文描述: 128K X 16 STANDARD SRAM, 70 ns, PDSO48
封装: TSOP1-48
文件页数: 1/12页
文件大小: 203K
代理商: W26B021T70LL
Preliminary W26B021
128K
× 16 CMOS STATIC RAM
Publication Release Date: April 19, 2002
- 1 -
Revision A1
GENERAL DESCRIPTION
The W26B021 is a normal speed, very low-power CMOS static RAM organized as 131,072
× 16 bits
that operates on a wide voltage range from 2.2V to 3.6V power supply. The W26B021T-LL,
W26B021T-LE and W26B021T-LI, can meet the requirement of various operating temperature. This
device is manufactured using Winbond’s high performance CMOS technology.
FEATURES
Low power consumption
Access time: 70, 100 nS
2.2V to 3.6V supply voltage
Fully static operation
All inputs and outputs directly TTL compatible
Three-state outputs
Battery back-up operation capability
Data retention voltage: 1.5V (min.)
Data byte control
#LB (I/O1 I/O8), #UB (I/O9 I/O16)
Available packages: 48-pin TSOP
PIN CONFIGURATION
32
28
22
21
20
19
18
17
1
48-pin
TSOP
3
4
5
6
7
8
9
10
11
12
13
14
15
16
2
A10
#OE
I/O16
A12
43
A6
A7
A5
A8
A11
A9
#UB
42
38
#LB
I/O15
I/O14
I/O13
I/O10
I/O11
I/O12
VDD
VSS
I/O9
A3
A2
A1
I/O7
I/O6
I/O5
I/O4
I/O8
VSS
I/O3
I/O2
I/O1
A13
A4
#WE
A15
A14
A16
CS2
23
24
A0
#CS1
46
44
41
40
39
35
31
30
29
27
26
25
37
36
34
33
48
47
45
NC
BLOCK DIAGRAM
CORE CELL ARRAY
1024 ROWS
128 X 16 COLUMNS
DATA
CNTRL.
CLK
GEN.
R
O
W
D
E
C
O
D
E
R
A6
I/O CKT.
COLUMN DECODER
#WE
#OE
CLK GEN.
PRECHARGE CKT.
A5
A4
A3
A2
A1
A0
#CS
A16
A15
A14
A13
A12
A10
A8
A7
I/O1
I/O16
:
A9
A11
#UB
#LB
PIN DESCRIPTION
SYMBOL
DESCRIPTION
A0
A16
Address Inputs
I/O1
I/O16
Data Inputs/Outputs
#CS1
Chip Select Input 1, Low Active
CS2
Chip Select Input 2, High Active
#WE
Write Enable Input
#LB
Lower byte select
#UB
Upper byte select
#OE
Output Enable Input
VDD
Power Supply
VSS
Ground
NC
No Connection
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