参数资料
型号: W26B021T70LL
厂商: WINBOND ELECTRONICS CORP
元件分类: SRAM
英文描述: 128K X 16 STANDARD SRAM, 70 ns, PDSO48
封装: TSOP1-48
文件页数: 12/12页
文件大小: 203K
代理商: W26B021T70LL
Preliminary W26B021
Publication Release Date: April 19, 2002
- 9 -
Revision A1
DATA RETENTION CHARACTERISTICS
(TA (
°C) = -20 to 85 for LE; -40 to 85 for LI)
PARAMETER
SYM.
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDD for Data Retention
VDR
#CS1
≥ VDD-0.2V or
CS2
≤ 0.2V
1.5
-
V
Data Retention Current
IDDDR
#CS1
≥ VDD -0.2V or
CS2
≤ 0.2V, VDD = 3.0V
-
5
A
Chip Deselect to Data
Retention Time
TCDR
See data retention waveform
0
-
nS
Operation Recovery Time
TR
TRC*
-
nS
* Read Cycle Time
DATA RETENTION WAVEFORM
TCDR
VDD
TR
#CS1
VDR
1.5V
=
>
- 0.2V
DD
V
#CS1 =>
0.9 x
DD
V
0.9 x
DD
V
CS2
0.2V
=
<
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