参数资料
型号: W26B02
英文描述: SRAM
中文描述: 静态存储器
文件页数: 5/12页
文件大小: 240K
代理商: W26B02
Preliminary W26B02
Publication Release Date: February 6, 2002
- 5 -
Revision A1
AC Characteristics, continued
(V
SS
= 0V; T
A
(
°
C) = -20 to 85 for LE, -40 to 85 for LI)
Read Cycle
PARAMETER
SYM.
W26B02-55
W26B02-70
UNIT
MIN.
55
-
-
-
-
10
5
5
-
-
-
10
MAX.
-
55
55
35
55
-
-
-
25
25
25
-
MIN.
70
-
-
-
-
10
5
5
-
-
-
10
MAX.
-
70
70
35
70
-
-
-
30
30
30
-
Read Cycle Time
Address Access Time
Chip Select Access Time
Output Enable to Output Valid
#UB, #LB Access Tim
Chip Selection to Output in Low Z
Output Enable to Output in Low Z
#UB, #LB Enable to Output in Low Z
Chip Deselection to Output in High Z
Output Disable to Output in High Z
#UB, #LB Disable to Output in High Z
Output Hold from Address Change
T
RC
T
AA
T
ACS
T
AOE
T
BA
T
CLZ
*
T
OLZ
*
T
BLZ
*
T
CHZ
*
T
OHZ
*
T
BHZ
*
T
OH
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
These parameters are sampled but not 100% tested
Write Cycle
PARAMETER
SYM.
W26B02-55
W26B02-70
UNIT
MIN.
55
45
45
45
0
45
0
35
0
-
-
5
MAX.
-
-
-
-
-
-
-
-
-
25
25
-
MIN.
70
60
60
60
0
55
0
40
0
-
-
5
MAX.
-
-
-
-
-
-
-
-
-
30
30
-
Write Cycle Time
Chip Selection to End of Write
Address Valid to End of Write
#UB, #LB Select to End of Write
Address Setup Time
Write Pulse Width
Write Recovery Time
Data Valid to End of Write
Data Hold from End of Write
Write to Output in High Z
Output Disable to Output in High Z
Output Active from End of Write
T
WC
T
CW
T
AW
T
BW
T
AS
T
WP
T
WR
T
DW
T
DH
T
WHZ
*
T
OHZ
*
T
OW
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
#CS, #WE
These parameters are sampled but not 100% tested
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