参数资料
型号: W27E02
英文描述: EPROM
中文描述: 存储器
文件页数: 5/15页
文件大小: 257K
代理商: W27E02
Preliminary W27E01
Publication Release Date: May 30, 2002
- 5 -
Revision A1
Program/Erase DC Characteristics
(T
A
= 25
°
C , V
DD
= 5.0V
±
10%, V
HH
= 12V)
LIMITS
TYP.
PARAMETER
SYM.
CONDITIONS
MIN.
MAX.
UNIT
Input Load Current
I
LI
V
IN
= V
IL
or V
IH
-10
-
10
μ
A
V
DD
Program Current
I
CP
#CE = V
IL,
#OE =
V
IH,
#PGM = V
IL
#CE = V
IL,
#OE = V
IH,
#PGM = V
IL
, A9 = V
HH
#CE = V
IL,
#OE =
V
IH,
#PGM = V
IL
#CE = V
IL,
#OE = V
IH,
#PGM = V
IL
, A9 = V
HH
-
-
30
mA
V
DD
Erase Current
I
CE
-
-
30
mA
V
PP
Program Current
I
PP
-
-
30
mA
V
PP
Erase Current
I
PE
-
-
30
mA
Input Low Voltage
V
IL
V
IH
V
OL
V
OH
V
ID
V
ID
V
PP
V
PE
-
-0.3
-
0.8
V
Input High Voltage
-
2.4
-
5.5
V
Output Low Voltage (Verify)
I
OL
= 2.1 mA
-
-
0.45
V
Output High Voltage (Verify)
I
OH
= -0.4 mA
2.4
-
-
V
A9 Silicon I.D. Voltage
-
11.5
12.0
12.5
V
A9 Erase Voltage
-
11.75
12.0
14.25
V
V
PP
Program Voltage
-
11.75
12.0
12.25
V
V
PP
Erase Voltage
-
11.75
12.0
14.25
V
V
DD
Supply Voltage
(Program)
V
CP
-
4.5
5.0
5.5
V
V
DD
Supply Voltage (Erase)
V
CE
-
4.5
5.0
5.5
V
V
DD
Supply Voltage (Erase
Verify)
V
PE
-
-
5.0
-
V
Note: V
DD
must be applied simultaneously or before V
PP
and removed simultaneously or after V
PP
.
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