参数资料
型号: W29C042P-90
厂商: WINBOND ELECTRONICS CORP
元件分类: PROM
英文描述: 512K X 8 FLASH 5V PROM, 90 ns, PQCC32
封装: PLASTIC, LCC-32
文件页数: 1/22页
文件大小: 297K
代理商: W29C042P-90
W29C042
512K
× 8 CMOS FLASH MEMORY
Publication Release Date: February 18, 2002
- 1 -
Revision A2
GENERAL DESCRIPTION
The W29C042 is a 4-megabit, 5-volt only CMOS page mode Flash Memory organized as 512K
× 8
bits. The device can be written (erased and programmed) in-system with a standard 5V power supply.
A 12-volt VPP is not required. The unique cell architecture of the W29C042 results in fast write (erase/
program) operations with extremely low current consumption (compared to other comparable 5-volt
flash memory products.) The device can also be erased and programmed by using standard EPROM
programmers.
FEATURES
Single 5-volt write (erase and program)
operations
Fast page-write operations
256 bytes per page
Page write (erase/program) cycle: 5 mS
(typ.)
Effective byte-write (erase/program) cycle
time: 19.5
S
Optional software-protected data write
Fast chip-erase operation: 50 mS
Two 16 KB boot blocks with lockout
Typical page write (erase/program) cycles:
10
100
Read access time: 90 nS
Ten-year data retention
Software and hardware data protection
Low power consumption
Active current: 25 mA (typ.)
Standby current: 20 A (typ.)
Automatic write (erase/program) timing with
internal VPP generation
End of write (erase/program) detection
Toggle bit
Data polling
Latched address and data
All inputs and outputs directly TTL compatible
JEDEC standard byte-wide pinouts
Available packages: 32-pin 600 mil DIP, PLCC
and TSOP
相关PDF资料
PDF描述
W29C101Q-12 64K X 16 FLASH 5V PROM, 120 ns, PDSO40
W29C101Q-70 64K X 16 FLASH 5V PROM, 70 ns, PDSO40
W29C101Q-90B 64K X 16 FLASH 5V PROM, 90 ns, PDSO40
W29C512MP-90 64K X 8 FLASH 5V PROM, 90 ns, PQCC32
W29C512MT-90 64K X 8 FLASH 5V PROM, 90 ns, PDSO32
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