参数资料
型号: W29EE512-90
厂商: WINBOND ELECTRONICS CORP
元件分类: PROM
英文描述: 64K X 8 FLASH 5V PROM, 90 ns, PDIP32
封装: 0.600 INCH, PLASTIC, DIP-32
文件页数: 1/21页
文件大小: 152K
代理商: W29EE512-90
Preliminary W29EE512
64K
× 8 CMOS FLASH MEMORY
Publication Release Date: April 1997
- 1 -
Revision A4
GENERAL DESCRIPTION
The W29EE512 is a 512K bit, 5-volt only CMOS flash memory organized as 64K
× 8 bits. The device
can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not
required. The unique cell architecture of the W29EE512 results in fast program/erase operations with
extremely low current consumption (compared to other comparable 5-volt flash memory products).
The device can also be programmed and erased using standard EPROM programmers.
FEATURES
Single 5-volt program and erase operations
Fast page-write operations
128 bytes per page
Page program cycle: 10 mS (max.)
Effective byte-program cycle time: 39 S
Optional software-protected data write
Fast chip-erase operation: 50 mS
Read access time: 70/90/120 nS
Typical page program/erase cycles: 1K/10K
Ten-year data retention
Software and hardware data protection
Low power consumption
Active current: 25 mA (typ.)
Standby current: 20 A (typ.)
Automatic program timing with internal VPP
generation
End of program detection
Toggle bit
Data polling
Latched address and data
TTL compatible I/O
JEDEC standard byte-wide pinouts
Available packages: 32-pin 600 mil DIP, 450
mil SOP, PLCC and TSOP
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