参数资料
型号: W29EE512-90
厂商: WINBOND ELECTRONICS CORP
元件分类: PROM
英文描述: 64K X 8 FLASH 5V PROM, 90 ns, PDIP32
封装: 0.600 INCH, PLASTIC, DIP-32
文件页数: 2/21页
文件大小: 152K
代理商: W29EE512-90
Preliminary W29EE512
- 10 -
Power-up Timing
PARAMETER
SYMBOL
TYPICAL
UNIT
Power-up to Read Operation
TPU.READ
100
S
Power-up to Write Operation
TPU.WRITE
5
mS
CAPACITANCE
(VCC = 5.0V, TA = 25
° C, f = 1 MHz)
PARAMETER
SYMBOL
CONDITIONS
MAX.
UNIT
I/O Pin Capacitance
CI/O
VI/O = 0V
12
pF
Input Capacitance
CIN
VIN = 0V
6
pF
AC CHARACTERISTICS
AC Test Conditions
PARAMETER
CONDITIONS
Input Pulse Levels
0V to 3V
Input Rise/Fall Time
< 5 nS
Input/Output Timing Level
1.5V/1.5V
Output Load
1 TTL Gate and CL = 100 pF/30 pF
AC Test Load and Waveform
+5V
1.8
1.3
100 pF
Input
3V
Test Point
DOUT
0V
1.5V
Test Point
Output
Kohm
(For 90 nS/120 nS)
30 pF
(For 70 nS)
相关PDF资料
PDF描述
W29GL064CB7S 64M X 1 FLASH 3V PROM, 70 ns, PDSO48
W29GL128CL1B 128M X 1 FLASH 3V PROM, 100 ns, PBGA64
W29N102CP-55B 64K X 16 FLASH 3.3V PROM, 55 ns, PQCC44
W2D15A250A 1 FUNCTIONS, 50 V, FERRITE CHIP
W1D15A270A 1 FUNCTIONS, 50 V, FERRITE CHIP
相关代理商/技术参数
参数描述
W29EE512P-12 制造商:WINBOND 制造商全称:Winbond 功能描述:64K X 8 CMOS FLASH MEMORY
W29EE512P-12B 制造商:WINBOND 制造商全称:Winbond 功能描述:64K X 8 CMOS FLASH MEMORY
W29EE512P-70 制造商:WINBOND 制造商全称:Winbond 功能描述:64K X 8 CMOS FLASH MEMORY
W29EE512P-70B 制造商:WINBOND 制造商全称:Winbond 功能描述:64K X 8 CMOS FLASH MEMORY
W29EE512P-90 制造商:WINBOND 制造商全称:Winbond 功能描述:64K X 8 CMOS FLASH MEMORY