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参数资料
| 型号： | W29EE512S-12 |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | PROM |
| 英文描述： | 64K X 8 FLASH 5V PROM, 120 ns, PDSO32 |
| 封装： | 0.450 INCH, SOP-32 |
| 文件页数： | 21/21页 |
| 文件大小： | 152K |
| 代理商： | W29EE512S-12 |
Preliminary W29EE512
Publication Release Date: April 1997
- 9 -
Revision A4
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER
RATING
UNIT
Power Supply Voltage to Vss Potential
-0.5 to +7.0
V
Operating Temperature
0 to +70
°C
Storage Temperature
-65 to +150
°C
D.C. Voltage on Any Pin to Ground Potential except A9
-0.5 to VCC +1.0
V
Transient Voltage ( 20 nS ) on Any Pin to Ground Potential
-1.0 to VCC +1.0
V
Voltage on A9 and OE Pin to Ground Potential
-0.5 to 12.5
V
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the
device.
Operating Characteristics
(VCC = 5.0V
±10%, VSS = 0V, TA = 0 to 70° C)
PARAMETER
SYM.
TEST CONDITIONS
LIMITS
UNIT
MIN. TYP.
MAX.
Power Supply
Current
ICC
CE = OE = VIL, WE = VIH, all I/Os open
Address inputs = VIL/VIH, at f = 5 MHz
--
50
mA
Standby Vcc
Current (TTL Input)
ISB1
CE = VIH, all I/Os open
Other inputs = VIL/VIH
-2
3
mA
Standby Vcc
Current (CMOS
Input)
ISB2
CE = VCC -0.3V, all I/Os open
Other inputs = VCC -0.3V/GND
-
20
100
A
Input Leakage
Current
ILI
VIN = GND to VCC
--
10
A
Output Leakage
Current
ILO
VIN = GND to VCC
--
10
A
Input Low Voltage
VIL
-
0.8
V
Input High Voltage
VIH
-
2.0
-
V
Output Low Voltage
VOL
IOL = 2.1 mA
-
0.45
V
Output High Voltage VOH1 IOH = -0.4 mA
2.4
-
V
Output High Voltage
CMOS
VOH2 IOH = -100
A; VCC = 4.5V
4.2
-
V
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相关代理商/技术参数 |
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| W29EE512S-70 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 Flash EEPROM |
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