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参数资料
| 型号： | W3DG64126V10D2F |
| 厂商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分类： | DRAM |
| 英文描述： | 128M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168 |
| 封装： | LEAD FREE, DIMM-168 |
| 文件页数： | 4/9页 |
| 文件大小： | 259K |
| 代理商： | W3DG64126V10D2F |
4
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
W3DG64126V-D2
January 2005
Rev. 1
White Electronic Designs Corp. reserves the right to change products or specications without notice.
IDD SPECIFICATIONS AND CONDITIONS
VCC, VCCQ = +3.3V ±0.3V; SDRAM component values only
PARAMETER/CONDITION
SYMBOL
MAX
UNITS
NOTES
7
7.5
10
OPERATING CURRENT: Active Mode; Burst = 2; READ or WRITE; tRC = tRC (MIN)
IDD1
1,920
1,760
mA
1
STANDBY CURRENT: Power-Down Mode; All device devicebanks idle; CKE = LOW
IDD2
56
mA
STANDBY CURRENT: Active Mode; CKE = HIGH; CS# = HIGH; All device banks
active after tRCD met; No accesses in progress
IDD3
720
mA
OPERATING CURRENT: Burst Mode; Continuous burst; READ or WRITE; All
device banks active
IDD4
2,000
1,840
mA
1
AUTO REFRESH CURRENT
tRFC = tRFC (MIN)
IDD5
3,920
mA
2
CKE = HIGH; CS# = HIGH
tRFC = 7.8125μsIDD6
96
mA
SELF REFRESH CURRENT: CKE < 0.2V
IDD7
96
mA
Notes:
1. Measured with outputs open.
2. Refresh period is 64ms.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W3DG64126V75D2 | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx64, SDRAM UNBUFFERED |
| W3DG64126V7D2 | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx64, SDRAM UNBUFFERED |
| W3DG64126V-D2 | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx64, SDRAM UNBUFFERED |
| W3DG64128V10D1 | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx64 SDRAM, UNBUFFERED w/PLL |
| W3DG64128V75D1 | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx64 SDRAM, UNBUFFERED w/PLL |
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