- 您现在的位置：买卖IC网 > PDF目录225534 > W3DG6430V10D2 (MICROSEMI CORP-PMG MICROELECTRONICS) 32M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168 PDF资料下载
参数资料
| 型号： | W3DG6430V10D2 |
| 厂商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分类： | DRAM |
| 英文描述： | 32M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168 |
| 封装： | DIMM-168 |
| 文件页数： | 4/6页 |
| 文件大小： | 154K |
| 代理商： | W3DG6430V10D2 |
February 2002
Rev. 0
W3DG6430V-D2
4
White Electronic Designs
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
PRELIMINARY
OPERATING CURRENT CHARACTERISTICS
VCC = 3.3V, 0°C ≤ TA ≤ 70°C
Parameters
Symbol
Conditions
Versions
Units
Note
100
Operating Current
(One bank active)
ICC1
Burst Length = 1
tRC ≥ tRC(min)
IOL = 0mA
1700
mA
1
Precharge Standby Current
in Power Down Mode
ICC2P
CKE ≤ VIL(max), tCC = 10ns
40
mA
ICC2PS
CKE & CK ≤ VIL(max), tCC = ∞
40
mA
Precharge Standby Current
in Non-Power Down Mode
ICC2N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC =10ns
Input signals are charged one time during 20
350
mA
ICC2NS
CKE ≥ VIH(min), CK ≤ VIL(max), tCC= ∞
Input signals are stable
180
mA
Active standby current in power-
down mode
ICC3P
CKE ≥ VIL(max), tCC = 10ns
90
mA
ICC3PS
CKE & CK ≤ VIL(max), tCC = ∞
90
Active standby in current non power-
down mode
ICC3N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are charged one time during 20ns
500
mA
ICC3NS
CKE ≥ VIH(min), CK ≤ VIL(max), tCC = ∞
input signals are stable
500
mA
Operating current (Burst mode)
ICC4
Io = mA
Page burst
4 Banks activated
tCCD = 2CK
1700
mA
1
Refresh current
ICC5
tRC ≥ tRC(min)
3300
mA
2
Self refresh current
ICC6
CKE ≤ 0.2V
40
mA
Notes: 1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noticed, input swing level is CMOS (VIH/VIL = VCC/VSSQ)
相关PDF资料 |
PDF描述 |
|---|---|
| W3DG72127V10D2 | 128M X 72 SYNCHRONOUS DRAM MODULE, DMA168 |
| W3DG72127V10D2 | 128M X 72 SYNCHRONOUS DRAM MODULE, DMA168 |
| W3DG7216V75JD1 | 16M X 72 SYNCHRONOUS DRAM MODULE, ZMA144 |
| W3DG7216V7D2 | 8M X 72 SYNCHRONOUS DRAM MODULE, DMA168 |
| W3DG7217V75D2 | 16M X 72 SYNCHRONOUS DRAM MODULE, DMA168 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W3DG6430V-D2 | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:256MB - 32M x 64 BUFFERED SDRAM MODULE |
| W3DG6432V10D2 | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:256MB- 32Mx64 SDRAM UNBUFFERED |
| W3DG6432V75D2 | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:256MB- 32Mx64 SDRAM UNBUFFERED |
| W3DG6432V7D2 | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:256MB- 32Mx64 SDRAM UNBUFFERED |
| W3DG6432V-D2 | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:256MB- 32Mx64 SDRAM UNBUFFERED |
发布紧急采购，3分钟左右您将得到回复。