参数资料
型号: W3E232M16S-400STCG
厂商: MICROSEMI CORP-PMG MICROELECTRONICS
元件分类: DRAM
英文描述: 64M X 16 DDR DRAM, 0.7 ns, PDSO66
封装: 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66
文件页数: 3/17页
文件大小: 562K
代理商: W3E232M16S-400STCG
W3E232M16S-400STCG
11
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
August 2007
Rev. 2
White Electronic Designs Corp. reserves the right to change products or specications without notice.
PRELIMINARY*
ABSOLUTE MAXIMUM RATINGS
Parameter
Unit
Voltage on VCC, VCCQ Supply relative to Vss
-1 to 3.6
V
Voltage on I/O pins relative to Vss
-0.5V to 3.6
V
Operating Temperature TA
0+ to +70
°C
Storage Temperature, Plastic
-55 to +125
°C
NOTE:Stress greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions greater than those indicated in the operational sections of this specication is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
CAPACITANCE (NOTE 13)
Parameter
Symbol
Max
Unit
Input Capacitance: CK/CK#
CI1
6
pF
Addresses, BA0-1 Input Capacitance
CA
6
pF
Input Capacitance: All other input-only pins
CI2
6pF
Input/Output Capacitance: I/Os
CIO
10
pF
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(NOTES 1-5, 16)
0°C ≤ TA ≤ +70°C
Parameter/Condition
Symbol
Min
Max
Units
Supply Voltage 400Mbs (36,40)
VCC
2.5
2.7
V
I/O Supply Voltage 400Mbs (36, 41, 44)
VCCQ
2.5
2.7
V
Input Leakage Current: Any input 0V ≤ VIN ≤ VCC (All other pins not under test = 0V)
II
-4
4
μA
Output Leakage Current: I/Os are disabled; 0V ≤ VOUT ≤ VCCQ
IOZ
-10
10
μA
Output Levels: Full drive option (37, 39)
High Current (VOUT = VCCQ - 0.373V, minimum VREF, minimum VTT)
Low Current (VOUT = 0.373V, maximum VREF, maximum VTT)
IOH
-12
-
mA
IOL
12
-
mA
Output Levels: Reduced drive option (38, 39)
High Current (VOUT = VCCQ - 0.763V, minimum VREF, minimum VTT)
Low Current (VOUT = 0.763V, maximum VREF, maximum VTT)
IOHR
-9
-
mA
IOLR
9-
mA
I/O Reference Voltage (6,44)
VREF
0.49 x VCCQ
0.51 x VCCQ
V
I/O Termination Voltage (7, 44)
VTT
VREF - 0.04
VREF + 0.04
V
相关PDF资料
PDF描述
W3E232M16S-400STCG 64M X 16 DDR DRAM, 0.7 ns, PDSO66
W764M32VESSB 64M X 32 FLASH 3V PROM, PBGA107
W934ED T-1 SINGLE COLOR LED, ORANGE, 3 mm
W934YD5V T-1 SINGLE COLOR LED, YELLOW, 3 mm
W937YYD T-1 SINGLE COLOR LED, YELLOW, 3 mm
相关代理商/技术参数
参数描述
W3E232M16S-400STI 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:2x32Mx16bit DDR SDRAM
W3E232M16S-400STIG 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:2x32Mx16bit DDR SDRAM
W3E232M16S-XSTX 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:2x32Mx16bit DDR SDRAM
W3E32M64S-200BC 制造商:Microsemi Corporation 功能描述:32M X 64 DDR, 2.5V, 200 MHZ, 219 PBGA, COMMERCIAL TEMP. - Bulk
W3E32M64S-200BI 制造商:Microsemi Corporation 功能描述:32M X 64 DDR, 2.5V, 200 MHZ, 219 PBGA, INDUSTRIAL TEMP. - Bulk