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参数资料
| 型号： | W3E64M16S-200NBM |
| 厂商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分类： | DRAM |
| 英文描述： | 64M X 16 DDR DRAM, 0.8 ns, PBGA60 |
| 封装： | 10 X 12.50 MM, 1.50 MM HEIGHT, PLASTIC, BGA-60 |
| 文件页数： | 11/17页 |
| 文件大小： | 493K |
| 代理商： | W3E64M16S-200NBM |
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White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
W3E64M16S-XNBX
May 2008
Rev. 0
BALL ASSIGNMENT (TOP VIEW) 60 BALL FBGA
NOTE: DNU = Do Not Use; to be left unconnected for future upgrades.
NC = Not Connected Internally.
V SSQ
DQ14
DQ12
DQ10
DQ8
V REF
DQ15
V CC
Q
V SSQ
V CCQ
V SSQ
V SS
CK
A12
A11
A8
A6
A4
V SS
DQ13
DQ11
DQ9
UDQS
UDM
CK#
CKE
A9
A7
A5
V SS
V CC
DQ2
DQ4
DQ6
LDQS
LDM
WE#
RAS#
BA1
A0
A2
V CC
DQ0
V SSQ
V CCQ
V SSQ
V CCQ
V CC
CAS#
CS#
BA0
A10
A1
A3
V CCQ
DQ1
DQ3
DQ5
DQ7
DNU
x16 (Top View)
A
1
2
3
4
5
6
789
B
C
D
E
F
G
H
J
K
L
M
相关PDF资料 |
PDF描述 |
|---|---|
| W3E64M16S-333SBC | 64M X 16 DDR DRAM, 0.7 ns, PBGA60 |
| W3E64M72S-266SBC | 64M X 72 DDR DRAM, 0.75 ns, PBGA219 |
| W3E64M72S-333SBI | 64M X 72 DDR DRAM, 0.7 ns, PBGA219 |
| W3E64M72S-333SBM | 64M X 72 DDR DRAM, 0.7 ns, PBGA219 |
| W3E64M72S-200SBC | 64M X 72 DDR DRAM, 0.8 ns, PBGA219 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W3E64M16S-200SBC | 制造商:Microsemi Corporation 功能描述:64M X 16 DDR, 2.5V, 200 MHZ, 60 PBGA, COMMERCIAL TEMP. - Bulk |
| W3E64M16S-200SBI | 制造商:Microsemi Corporation 功能描述:64M X 16 DDR, 2.5V, 200 MHZ, 60 PBGA, INDUSTRIAL TEMP. - Bulk |
| W3E64M16S-200SBM | 制造商:Microsemi Corporation 功能描述:64M X 16 DDR, 2.5V, 200 MHZ, 60 PBGA, MIL-TEMP. - Bulk |
| W3E64M16S-250NBC | 制造商:Microsemi Corporation 功能描述:64M X 16 DDR, 2.5V, 250 MHZ, 60 PBGA, COMMERCIAL TEMP. - Bulk |
| W3E64M16S-250NBI | 制造商:Microsemi Corporation 功能描述:64M X 16 DDR, 2.5V, 250 MHZ, 60 PBGA, INDUSTRIAL TEMP. - Bulk |
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